5.5 v 7mhz UGBW双轨对轨CMOS运算放大器,带使能引脚和Hi-Z输出功能

C. Stănescu, C. Dinca, David Paul
{"title":"5.5 v 7mhz UGBW双轨对轨CMOS运算放大器,带使能引脚和Hi-Z输出功能","authors":"C. Stănescu, C. Dinca, David Paul","doi":"10.1109/SMICND.2019.8924013","DOIUrl":null,"url":null,"abstract":"The paper presents a dual rail-to-rail CMOS op amp having a unity-gain bandwidth (UGBW) better than 7 MHz across the 2.5-5.5 V supply range. The circuit has an Enable pin and, during Disable status, its outputs are in Hi-Z, avoiding current flowing into circuit from the load that is prone to get higher than the supply voltage. It was fabricated using a $0.25 {\\mu} \\mathrm{m}$ BCD process. The amplifier has a maximum offset voltage of 1 mV, a minimum PSRR of 95 dB, a minimum CMRR of 66 dB, a minimum open-loop gain of 100 dB, and a voltage noise spectral density of 20 nV/$\\surd$Hz at 10 kHz, while consuming $850 {\\mu} \\mathrm{A}$ per channel. The die area is only 1 mm2 and has no package, but 9 bumps.","PeriodicalId":151985,"journal":{"name":"2019 International Semiconductor Conference (CAS)","volume":"4 5 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"A 5.5-V 7-MHz UGBW Dual Rail-to-Rail CMOS Op Amp with Enable Pin and Hi-Z Output Feature\",\"authors\":\"C. Stănescu, C. Dinca, David Paul\",\"doi\":\"10.1109/SMICND.2019.8924013\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The paper presents a dual rail-to-rail CMOS op amp having a unity-gain bandwidth (UGBW) better than 7 MHz across the 2.5-5.5 V supply range. The circuit has an Enable pin and, during Disable status, its outputs are in Hi-Z, avoiding current flowing into circuit from the load that is prone to get higher than the supply voltage. It was fabricated using a $0.25 {\\\\mu} \\\\mathrm{m}$ BCD process. The amplifier has a maximum offset voltage of 1 mV, a minimum PSRR of 95 dB, a minimum CMRR of 66 dB, a minimum open-loop gain of 100 dB, and a voltage noise spectral density of 20 nV/$\\\\surd$Hz at 10 kHz, while consuming $850 {\\\\mu} \\\\mathrm{A}$ per channel. The die area is only 1 mm2 and has no package, but 9 bumps.\",\"PeriodicalId\":151985,\"journal\":{\"name\":\"2019 International Semiconductor Conference (CAS)\",\"volume\":\"4 5 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2019 International Semiconductor Conference (CAS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SMICND.2019.8924013\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 International Semiconductor Conference (CAS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMICND.2019.8924013","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

摘要

本文提出了一种双轨对轨CMOS运放,其单位增益带宽(UGBW)在2.5-5.5 V供电范围内优于7 MHz。电路有一个使能引脚,在使能状态下,其输出在Hi-Z,避免电流从负载流入电路,容易获得高于电源电压。它是使用$0.25 {\mu} \ mathm {m}$ BCD工艺制造的。该放大器的最大失调电压为1 mV,最小PSRR为95 dB,最小CMRR为66 dB,最小开环增益为100 dB,在10 kHz时电压噪声谱密度为20 nV/$ $ $ surd$Hz,而每个通道消耗$850 {\mu} \math {a}$。模具面积只有1平方毫米,没有封装,但有9个凸起。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A 5.5-V 7-MHz UGBW Dual Rail-to-Rail CMOS Op Amp with Enable Pin and Hi-Z Output Feature
The paper presents a dual rail-to-rail CMOS op amp having a unity-gain bandwidth (UGBW) better than 7 MHz across the 2.5-5.5 V supply range. The circuit has an Enable pin and, during Disable status, its outputs are in Hi-Z, avoiding current flowing into circuit from the load that is prone to get higher than the supply voltage. It was fabricated using a $0.25 {\mu} \mathrm{m}$ BCD process. The amplifier has a maximum offset voltage of 1 mV, a minimum PSRR of 95 dB, a minimum CMRR of 66 dB, a minimum open-loop gain of 100 dB, and a voltage noise spectral density of 20 nV/$\surd$Hz at 10 kHz, while consuming $850 {\mu} \mathrm{A}$ per channel. The die area is only 1 mm2 and has no package, but 9 bumps.
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