igbt功率模块中的线键可靠性:高分辨率应变和温度映射的应用

11th International Symposium on Power Semiconductor Devices and ICs. ISPSD'99 Proceedings (Cat. No.99CH36312) Pub Date : 1999-05-26 DOI:10.1109/ISPSD.1999.764076

V. Mehrotra, Jun He, M. S. Dadkhah, K. Rugg, M. Shaw

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引用次数: 25

摘要

针对基于igbt的电源模块中线键的可靠性，建立了一种基于断裂力学的模型。在瞬态和稳态下，通过测量线键和器件的极局部位移和温度分布，实现了模型的初始关联。测量是通过高分辨率全息干涉测量和高速红外显微镜进行的。已经发现线键的几何形状对局部温度分布和可靠性有深远的影响。

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Wirebond reliability in IGBT-power modules: application of high resolution strain and temperature mapping

A fracture mechanics-based model has been developed for the reliability of wirebonds in IGBT-based power modules. Initial correlation of the model has been achieved based upon measurements of extremely localized displacements and temperature distributions of wirebonds and devices during both transient and steady states. The measurements have been performed by high-resolution holographic interferometry and high-speed infrared microscopy. The wirebond geometry has been found to have a profound effect on the localized temperature distribution and hence reliability.

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11th International Symposium on Power Semiconductor Devices and ICs. ISPSD'99 Proceedings (Cat. No.99CH36312)

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