在日益互联的世界中,工艺技术的规模化

J. Clarke, Christopher George, C. Jezewski, A. M. Caro, D. Michalak, J. Torres
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引用次数: 35

摘要

随着尺寸的缩小,互连系统施加的RC延迟和功率限制会导致电路性能越来越差。电阻的增长速度快于该技术的比例因子,而电容的改进受到组装堆栈的机械要求的限制。总的来说,这些都会导致芯片上本地和全局信息传输的瓶颈。人们正在探索新的沉积方法和新的导体材料,以增加导电截面积。分子排序是同时提供电容和机械强度的机会。尽管有这些改进途径,但需要一种更全面的互连设计方法,其中应用程序和微架构更能容忍RC缩放限制。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Process technology scaling in an increasingly interconnect dominated world
The RC delay and power restrictions imposed by the interconnect system can contribute to poor circuit performance in an increasingly severe manner as dimensions shrink. Resistances are increasing faster than the scale factor of the technology and capacitance improvements are constrained by mechanical requirements of the assembled stack. Collectively, these cause a bottleneck in both local and global information transfer on a chip. Novel deposition methods and novel conductor materials are being explored as means to increase conductive cross sectional area. Molecular ordering is an opportunity to simultaneously deliver capacitance and mechanical strength. Despite these improvement paths, a more holistic approach to interconnect design is needed, where the application and micro architecture are more tolerant of RC scaling constraints.
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CiteScore
3.40
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