用于移动电视应用的65nm CMOS宽带LNA噪声系数低于2db

2010 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF) Pub Date : 2010-01-10 DOI:10.1109/RWS.2010.5434173

A. Youssef, A. Ismail, J. Haslett

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引用次数: 8

摘要

设计并实现了一种基于噪声消除方法的新型宽带CMOS LNA。该LNA中使用的降噪机制允许在不使用任何电感的情况下实现低至1.6 dB的VHF/UHF频段的噪声系数。LNA的增益大于36db，功耗仅为18mw。

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A sub - 2 dB noise figure wideband LNA in 65 nm CMOS for mobile TV applications

A novel broadband CMOS LNA based on the noise-canceling approach has been designed and implemented in 65 nm CMOS technology. The noise-canceling mechanisms used in this LNA allow the achievement of a noise figure as low as 1.6 dB to be feasible across the VHF/UHF bands without using any inductors. The LNA has a gain greater than 36 dB and consumes only 18 mW of power.

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来源期刊

2010 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF)

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