5.5 - 7.5 ghz波段可配置唤醒接收器,完全集成在45nm RF-SOI CMOS中

IF 1 4区 工程技术 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC
Rui Ma, Florian Protze, Frank Ellinger
{"title":"5.5 - 7.5 ghz波段可配置唤醒接收器,完全集成在45nm RF-SOI CMOS中","authors":"Rui Ma,&nbsp;Florian Protze,&nbsp;Frank Ellinger","doi":"10.1049/cds2.12123","DOIUrl":null,"url":null,"abstract":"<p>This work investigates a 5.5–7.5-GHz band-configurable duty-cycled wake-up receiver (WuRX) fully implemented in a 45-nm radio-frequency (RF) silicon-on-insulator (SOI) complementary-metal-oxide-semiconductor (CMOS) technology. Based on an uncertain intermediate frequency (IF) super-heterodyne receiver (RX) topology, the WuRX analogue front-end (AFE) incorporates a 5.5–7.5-GHz band-tunable low-power low-noise amplifier, a low-power Gilbert mixer, a digitally controlled oscillator (DCO), a 100-MHz IF band-pass filter (BPF), an envelope detector, a comparator, a pulse generator and a current reference. By application of duty cycling with a low duty cycle below 1%, the power consumption of the AFE was significantly reduced. In addition, the on-chip digital bank-end consists of a frequency divider, a phase corrector, a 31-bit correlator and a serial peripheral interface. A proof-of-concept WuRX circuit occupying an area of 1200 <i>μ</i>m by 900 <i>μ</i>m has been fabricated in a GlobalFoundries 45-nm RF-SOI CMOS technology. Measurement results show that at a data rate of 64 bps, the entire WuRX consumes only 2.3 <i>μ</i>W. Tested at 8 operation bands covering 5.5–7.7 GHz, the WuRX has a measured sensitivity between −67.5 dBm and −72.4 dBm at a wake-up error rate of 10<sup>−3</sup>. With the sensitivity unchanged, the data rate of the WuRX can be scaled up to 8.2 kbps. To the authors' best knowledge, this work offers the largest RF bandwidth from 5.5 to 7.5 GHz, the most operation channels (≥8) and the fastest settling time (&lt;115 ns) among the WuRXs reported to date.</p>","PeriodicalId":50386,"journal":{"name":"Iet Circuits Devices & Systems","volume":null,"pages":null},"PeriodicalIF":1.0000,"publicationDate":"2022-06-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ietresearch.onlinelibrary.wiley.com/doi/epdf/10.1049/cds2.12123","citationCount":"0","resultStr":"{\"title\":\"A 5.5–7.5-GHz band-configurable wake-up receiver fully integrated in 45-nm RF-SOI CMOS\",\"authors\":\"Rui Ma,&nbsp;Florian Protze,&nbsp;Frank Ellinger\",\"doi\":\"10.1049/cds2.12123\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p>This work investigates a 5.5–7.5-GHz band-configurable duty-cycled wake-up receiver (WuRX) fully implemented in a 45-nm radio-frequency (RF) silicon-on-insulator (SOI) complementary-metal-oxide-semiconductor (CMOS) technology. Based on an uncertain intermediate frequency (IF) super-heterodyne receiver (RX) topology, the WuRX analogue front-end (AFE) incorporates a 5.5–7.5-GHz band-tunable low-power low-noise amplifier, a low-power Gilbert mixer, a digitally controlled oscillator (DCO), a 100-MHz IF band-pass filter (BPF), an envelope detector, a comparator, a pulse generator and a current reference. By application of duty cycling with a low duty cycle below 1%, the power consumption of the AFE was significantly reduced. In addition, the on-chip digital bank-end consists of a frequency divider, a phase corrector, a 31-bit correlator and a serial peripheral interface. A proof-of-concept WuRX circuit occupying an area of 1200 <i>μ</i>m by 900 <i>μ</i>m has been fabricated in a GlobalFoundries 45-nm RF-SOI CMOS technology. Measurement results show that at a data rate of 64 bps, the entire WuRX consumes only 2.3 <i>μ</i>W. Tested at 8 operation bands covering 5.5–7.7 GHz, the WuRX has a measured sensitivity between −67.5 dBm and −72.4 dBm at a wake-up error rate of 10<sup>−3</sup>. With the sensitivity unchanged, the data rate of the WuRX can be scaled up to 8.2 kbps. To the authors' best knowledge, this work offers the largest RF bandwidth from 5.5 to 7.5 GHz, the most operation channels (≥8) and the fastest settling time (&lt;115 ns) among the WuRXs reported to date.</p>\",\"PeriodicalId\":50386,\"journal\":{\"name\":\"Iet Circuits Devices & Systems\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":1.0000,\"publicationDate\":\"2022-06-09\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://ietresearch.onlinelibrary.wiley.com/doi/epdf/10.1049/cds2.12123\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Iet Circuits Devices & Systems\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://onlinelibrary.wiley.com/doi/10.1049/cds2.12123\",\"RegionNum\":4,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q4\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Iet Circuits Devices & Systems","FirstCategoryId":"5","ListUrlMain":"https://onlinelibrary.wiley.com/doi/10.1049/cds2.12123","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0

摘要

本研究研究了一种5.5 - 7.5 ghz波段可配置的占空比唤醒接收器(WuRX),该接收器完全实现在45纳米射频(RF)绝缘体上硅(SOI)互补金属氧化物半导体(CMOS)技术中。基于不确定中频(IF)超外差接收机(RX)拓扑结构,WuRX模拟前端(AFE)包含一个5.5 - 7.5 ghz带可调谐低功率低噪声放大器、一个低功率吉尔伯特混频器、一个数字控制振荡器(DCO)、一个100 mhz中频带通滤波器(BPF)、一个包络检测器、一个比较器、一个脉冲发生器和一个电流基准。采用占空比小于1%的低占空比,显著降低了AFE的功耗。此外,片上数字银行端由分频器、相位校正器、31位相关器和串行外设接口组成。采用GlobalFoundries的45纳米RF-SOI CMOS技术制造了面积为1200 μm × 900 μm的概念验证型WuRX电路。测量结果表明,在数据速率为64bps时,整个WuRX的功耗仅为2.3 μW。在覆盖5.5-7.7 GHz的8个工作频段上进行测试,WuRX的测量灵敏度在- 67.5 dBm至- 72.4 dBm之间,唤醒错误率为10 - 3。在灵敏度不变的情况下,WuRX的数据速率可以扩展到8.2 kbps。据作者所知,这项工作提供了迄今为止报道的wurx中最大的RF带宽从5.5到7.5 GHz,最多的操作通道(≥8)和最快的建立时间(<115 ns)。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

A 5.5–7.5-GHz band-configurable wake-up receiver fully integrated in 45-nm RF-SOI CMOS

A 5.5–7.5-GHz band-configurable wake-up receiver fully integrated in 45-nm RF-SOI CMOS

This work investigates a 5.5–7.5-GHz band-configurable duty-cycled wake-up receiver (WuRX) fully implemented in a 45-nm radio-frequency (RF) silicon-on-insulator (SOI) complementary-metal-oxide-semiconductor (CMOS) technology. Based on an uncertain intermediate frequency (IF) super-heterodyne receiver (RX) topology, the WuRX analogue front-end (AFE) incorporates a 5.5–7.5-GHz band-tunable low-power low-noise amplifier, a low-power Gilbert mixer, a digitally controlled oscillator (DCO), a 100-MHz IF band-pass filter (BPF), an envelope detector, a comparator, a pulse generator and a current reference. By application of duty cycling with a low duty cycle below 1%, the power consumption of the AFE was significantly reduced. In addition, the on-chip digital bank-end consists of a frequency divider, a phase corrector, a 31-bit correlator and a serial peripheral interface. A proof-of-concept WuRX circuit occupying an area of 1200 μm by 900 μm has been fabricated in a GlobalFoundries 45-nm RF-SOI CMOS technology. Measurement results show that at a data rate of 64 bps, the entire WuRX consumes only 2.3 μW. Tested at 8 operation bands covering 5.5–7.7 GHz, the WuRX has a measured sensitivity between −67.5 dBm and −72.4 dBm at a wake-up error rate of 10−3. With the sensitivity unchanged, the data rate of the WuRX can be scaled up to 8.2 kbps. To the authors' best knowledge, this work offers the largest RF bandwidth from 5.5 to 7.5 GHz, the most operation channels (≥8) and the fastest settling time (<115 ns) among the WuRXs reported to date.

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来源期刊
Iet Circuits Devices & Systems
Iet Circuits Devices & Systems 工程技术-工程:电子与电气
CiteScore
3.80
自引率
7.70%
发文量
32
审稿时长
3 months
期刊介绍: IET Circuits, Devices & Systems covers the following topics: Circuit theory and design, circuit analysis and simulation, computer aided design Filters (analogue and switched capacitor) Circuit implementations, cells and architectures for integration including VLSI Testability, fault tolerant design, minimisation of circuits and CAD for VLSI Novel or improved electronic devices for both traditional and emerging technologies including nanoelectronics and MEMs Device and process characterisation, device parameter extraction schemes Mathematics of circuits and systems theory Test and measurement techniques involving electronic circuits, circuits for industrial applications, sensors and transducers
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