LiNbO/ sub3 /单晶稳定的高电子发射

M. Yin, Y. Ren, Dejie Li
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引用次数: 0

摘要

利用高负电压亚微秒脉冲对LiNbO/sub - 3/单晶Z-cut片样品进行激发,获得了其发射特性。当脉冲电压超过阈值(实验中为800V)时,我们观察到样品表面有稳定的高电子发射。该阈值与驱动频率和阳极电压无关。在阈值以下,电子发射密度随阳极电压的增大而增大,在阈值以上,电子发射密度随阳极电压变化不大。当驱动脉冲V/sub p-p/为900V时,电子发射密度达到峰值50A/cm。发射电流与驱动信号不同步。当驱动电压频率为10khz时,发射电流的频率仅为1hz。随着驱动频率的降低,发射电流的频率进一步降低。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Stable high electron emission from LiNbO/sub 3/single crystal
A sample of LiNbO/sub 3/ single crystal Z-cut slice is stimulated by a high negative voltage submicrosecond pulse to obtain the emission. When the pulse voltage exceeds a threshold, which is 800V in the experiment, we observe a stable high electron emission from the sample's surface. The threshold is irrelevant to the driving frequency and the anode voltage. Below the threshold the electron emission density increases with the anode voltage, above the threshold the electron emission density varies very little with the anode voltage. The electron emission density reached a peak value of 50A/cm, when the driving pulse V/sub p-p/ is 900V. The emission current is not synchronized with the driving signal. When the frequency of the driving voltage is 10 kHz, the frequency of the emission current is only 1 Hz. The frequency of the emission current further decreases, as the driving frequency decreases.
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