TiN、ZrN和HfN/Ge界面的费米能级钉钉缓解

2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM) Pub Date : 2014-06-02 DOI:10.1109/ISTDM.2014.6874625

K. Yamamoto, Dong Wang, H. Nakashima

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引用次数: 0

摘要

ZrN和HfN/Ge接触的FLP缓解与TiN/Ge相似。其中ZrN的缓解作用强于TiN。对于所有材料，用J-V法和C-V法估算的ΦBPs几乎相同。推测金属氮化物/锗的界面结构是均匀的。

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Fermi level pinning alleviation at the TiN, ZrN, and HfN/Ge interfaces

ZrN and HfN/Ge contacts showed FLP alleviation similar to TiN/Ge. Especially, ZrN indicated stronger alleviation than TiN. About all materials, the ΦBPs estimated using J-V and C-V methods are almost the same. It is supposed that the interfacial structures of metal nitride/Ge are uniform.

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2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM)

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