预测和设计工艺变化和不匹配对带隙基准的修剪范围和良率的影响

V. Gupta, G. Rincón-Mora
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引用次数: 26

摘要

制程公差和器件失配在带隙电压参考电路中产生显著的随机变化。这些变化导致参考电压的误差,并通过增加修整要求和降低成品率显著影响制造成本。电流镜失配、V/sub BE/ spread、封装移位和电阻失配是带隙参考电路中随机误差的主要来源。通常用于低压应用的折叠级联码拓扑可以进行优化,以有效减轻镜像器件中不匹配的影响。通过降低级联码中电流与带隙核心电路的电流之比,并确定实现电流镜和电流源的最佳匹配器件,可以显著减少这些不匹配。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Predicting and designing for the impact of process variations and mismatch on the trim range and yield of bandgap references
Process tolerance and device mismatch produce significant random variations in bandgap voltage reference circuits. These variations lead to errors in the reference voltage and significantly impact manufacturing cost by increasing trimming requirements and decreasing yield. Current-mirror mismatch, followed by V/sub BE/ spread, package shift, and resistor mismatch are the dominant sources of random error in bandgap reference circuits. A folded-cascode topology, often used in low voltage applications, can be optimized to effectively alleviate the effects of a mismatch in the mirroring devices. By decreasing the ratio of the current in the cascode to that of the bandgap core circuit and ascertaining the best-matched devices for implementing current-mirrors and current sources, these mismatches can be significantly reduced.
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