一种峰值效率88%的28nm FDSOI集成可重构开关电容升压DC-DC变换器

Avishek Biswas, Yildiz Sinangil, A. Chandrakasan
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引用次数: 3

摘要

本文提出了一种基于28纳米FDSOI工艺的完全集成、可重构开关电容的升压DC-DC变换器。三种可重构升压转换比率(5/ 2,2 / 1,3 /2)已经实现,可以提供从1.2V到2.4V的宽范围输出电压,标称输入电压为1V。我们提出了一种5/2模式的拓扑结构,与传统的串并联拓扑结构相比,它通过减少底板寄生损耗来提高效率,同时提供相同数量的输出功率。此外,所提出的拓扑结构得益于为所有电荷转移开关使用核心1V器件,而不会产生任何电压过应力。该变换器的负载电流范围为10 μA ~ 500 μA,峰值效率为88%,仅采用片上MOS和MOM电容实现高密度。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A 28nm FDSOI integrated reconfigurable switched-capacitor based step-up DC-DC converter with 88% peak efficiency
This paper presents a fully integrated, reconfigurable switched-capacitor based step-up DC-DC converter in a 28nm FDSOI process. Three reconfigurable step-up conversion ratios (5/2, 2/1, 3/2) have been implemented which can provide a wide range of output voltage from 1.2V to 2.4V with a nominal input voltage of 1V. We propose a topology for the 5/2 mode which improves the efficiency by reducing the bottom-plate parasitic loss compared to a conventional series-parallel topology, while delivering the same amount of output power. Further, the proposed topology benefits from using core 1V devices for all charge-transfer switches without incurring any voltage overstress. The converter can deliver load current in the range of 10 μA to 500 μA, achieving a peak efficiency of 88%, using only on-chip MOS and MOM capacitors for a high density implementation.
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