基于swcnts的TSV表征

K. Salah
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引用次数: 1

摘要

高性能3D TSV互连对于可靠性至关重要,但填充材料的选择也是一个关键问题,因为热不相容、电迁移和高电阻率仍然是瓶颈。在本文中,SW-CNT束作为TSV的潜在填充材料进行了研究,并与传统的填充材料如Cu, W和多晶硅进行了比较。研究发现,SW-CNT束具有独特的电学、热学和机械特性,可用于制造更好的TSV互连。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Characterization of SWCNT-based TSV
High performance 3D TSV interconnects are important for reliability, choice of the filler material is also a critical issue as thermal incompatibility, electromigration and, high resistivity are still a bottleneck. In this paper, SW-CNT bundles as a prospective filler material for TSV are investigated compared to conventional filler materials like Cu, W, and poly-silicon. It is found that SW-CNT bundles exhibit unique electrical, thermal, and mechanical characteristics that can be used to fabricate better TSV interconnects.
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