一种通道堆叠NAND快闪记忆体中采用多阶运算选层的增强共源行程式设计

Do-Bin Kim, D. Kwon, Seunghyun Kim, Sang-Ho Lee, Byung-Gook Park
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引用次数: 0

摘要

为了获得较高的信道升压电位,并减少多层操作(LSM)选层信道堆叠型中的程序干扰,提出了一种利用升压共源线(CSL)的新方案。该方案可以通过对每一层的CSL施加适当的偏置来实现。为了验证新方法在LSM中的有效性,进行了TCAD仿真。通过TCAD仿真表明,该方案显著改善了程序的扰动特性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A boosted common source line program scheme in channel stacked NAND flash memory with layer selection by multilevel operation
In order to obtain high channel boosting potential and to reduce a program disturbance in channel stacked type with layer selection by multi-level operation (LSM), a new program scheme using boosted common source line (CSL) is proposed. The proposed scheme can be achieved by applying proper bias to each layer through its own CSL. To verify the validity of the new method in LSM, TCAD simulations are performed. Through TCAD simulation, it is revealed that the program disturbance characteristics is significantly improved by the proposed scheme.
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