氮离子束轰击氮化界面层CeO/sub 2//Si的结构和电学性能

2001 6th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.01EX443) Pub Date : 2001-10-22 DOI:10.1109/ICSICT.2001.981485

Jinfeng Kang, Xiaoyan Liu, R. Han, Yangyuan Wang, G. Lian, K. Xun, D. Yu, G. Xiong, S.C. Wu, Y. Wang

{"title":"氮离子束轰击氮化界面层CeO/sub 2//Si的结构和电学性能","authors":"Jinfeng Kang, Xiaoyan Liu, R. Han, Yangyuan Wang, G. Lian, K. Xun, D. Yu, G. Xiong, S.C. Wu, Y. Wang","doi":"10.1109/ICSICT.2001.981485","DOIUrl":null,"url":null,"abstract":"The effects of nitrided interfacial layer between CeO/sub 2/-Si on the interfacial properties are studied. The process of nitrogen ion beam bombardment (NIBB) was used to form the nitride dielectric-Si interface. The CeO/sub 2/ high-k dielectric films were grown on Si[100] substrates by pulsed laser deposition (PLD) and the capacitors with Pt/CeO/sub 2//Si structure were fabricated. The atomic force microscopy (AFM), x-ray photoelectron spectroscopy (XPS), high-resolution transmission electron microscopy (HRTEM), capacitance-voltage (C-V), and current-voltage (I-V) methods were used to study the interfacial characteristics of the samples. The results showed that a SiN/sub x/O/sub y/ layer was formed on Si surface by the NIBB process. The nitride layer between CeO/sub 2/ and Si can suppress the further formation of interfacial layer between CeO/sub 2/ and Si, which is helpful to improve the structural and electrical characteristics of CeO/sub 2/-Si interface.","PeriodicalId":349087,"journal":{"name":"2001 6th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.01EX443)","volume":"30 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2001-10-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Structural and electrical properties of CeO/sub 2//Si with nitrided interfacial layer by nitrogen ion beam bombardment\",\"authors\":\"Jinfeng Kang, Xiaoyan Liu, R. Han, Yangyuan Wang, G. Lian, K. Xun, D. Yu, G. Xiong, S.C. Wu, Y. Wang\",\"doi\":\"10.1109/ICSICT.2001.981485\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The effects of nitrided interfacial layer between CeO/sub 2/-Si on the interfacial properties are studied. The process of nitrogen ion beam bombardment (NIBB) was used to form the nitride dielectric-Si interface. The CeO/sub 2/ high-k dielectric films were grown on Si[100] substrates by pulsed laser deposition (PLD) and the capacitors with Pt/CeO/sub 2//Si structure were fabricated. The atomic force microscopy (AFM), x-ray photoelectron spectroscopy (XPS), high-resolution transmission electron microscopy (HRTEM), capacitance-voltage (C-V), and current-voltage (I-V) methods were used to study the interfacial characteristics of the samples. The results showed that a SiN/sub x/O/sub y/ layer was formed on Si surface by the NIBB process. The nitride layer between CeO/sub 2/ and Si can suppress the further formation of interfacial layer between CeO/sub 2/ and Si, which is helpful to improve the structural and electrical characteristics of CeO/sub 2/-Si interface.\",\"PeriodicalId\":349087,\"journal\":{\"name\":\"2001 6th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.01EX443)\",\"volume\":\"30 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2001-10-22\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2001 6th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.01EX443)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICSICT.2001.981485\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2001 6th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.01EX443)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICSICT.2001.981485","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

研究了CeO/sub - 2/-Si界面层氮化对界面性能的影响。采用氮离子束轰击(NIBB)工艺形成氮化介质-硅界面。采用脉冲激光沉积(PLD)技术在Si[100]衬底上生长了CeO/sub 2/高k介电膜，制备了具有Pt/CeO/sub 2/ Si结构的电容器。采用原子力显微镜(AFM)、x射线光电子能谱(XPS)、高分辨率透射电镜(HRTEM)、电容-电压(C-V)和电流-电压(I-V)等方法研究了样品的界面特征。结果表明:NIBB法在Si表面形成了SiN/sub x/O/sub y/层;在CeO/sub - 2/与Si之间形成氮化物层，可以抑制CeO/sub - 2/与Si之间进一步形成界面层，有利于改善CeO/sub - 2/-Si界面的结构和电学特性。

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Structural and electrical properties of CeO/sub 2//Si with nitrided interfacial layer by nitrogen ion beam bombardment

The effects of nitrided interfacial layer between CeO/sub 2/-Si on the interfacial properties are studied. The process of nitrogen ion beam bombardment (NIBB) was used to form the nitride dielectric-Si interface. The CeO/sub 2/ high-k dielectric films were grown on Si[100] substrates by pulsed laser deposition (PLD) and the capacitors with Pt/CeO/sub 2//Si structure were fabricated. The atomic force microscopy (AFM), x-ray photoelectron spectroscopy (XPS), high-resolution transmission electron microscopy (HRTEM), capacitance-voltage (C-V), and current-voltage (I-V) methods were used to study the interfacial characteristics of the samples. The results showed that a SiN/sub x/O/sub y/ layer was formed on Si surface by the NIBB process. The nitride layer between CeO/sub 2/ and Si can suppress the further formation of interfacial layer between CeO/sub 2/ and Si, which is helpful to improve the structural and electrical characteristics of CeO/sub 2/-Si interface.

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2001 6th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.01EX443)

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