论NBTI中“永久性”退化的性质

2013 IEEE International Integrated Reliability Workshop Final Report Pub Date : 2013-10-01 DOI:10.1109/IIRW.2013.6804181

D. Nguyen, C. Kouhestani, K. Kambour, R. Devine

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引用次数: 3

摘要

本文报道了NMOS和PMOS器件中负偏置温度不稳定性引起的界面状态的新的高温测量方法。以前被认为是“永久”的界面状态退火的证据，被提出用于测量，包括一种方法，该方法允许直接测量界面状态组分的随时间增长/恢复。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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On the nature of “permanent” degradation in NBTI

This paper reports new high temperature measurements of Negative Bias Temperature Instability induced interface states in both NMOS and PMOS devices. Evidence of annealing of the interface states, previously thought to be “permanent”, is presented for measurements including a methodology which allows the direct measurement of the time dependent growth/recovery of the interface state component.

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2013 IEEE International Integrated Reliability Workshop Final Report

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