电磁脉冲环境下电加热耦合对MOSFET性能的影响

2018 IEEE International Conference on Electron Devices and Solid State Circuits (EDSSC) Pub Date : 2018-06-01 DOI:10.1109/EDSSC.2018.8487129

Jinfu Lin, Hongxia Liu, Shulong Wang

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引用次数: 6

摘要

强电磁脉冲主要通过电击穿或热击穿导致MOSFET失效。因此，研究MOSFET的热分布具有重要意义。利用器件仿真软件Sentaurus建立了一个具有适当参数的三维MOSFET。详细分析了电磁脉冲(EMP)对MOSFET的损伤效应和降解机理。结果表明，EMP注入时，唯一的热点是在漏极-衬底PN结处，由于热沉积，它首先达到硅的熔点。同时，该区域的电场强度和电流密度分布较为密集。该设备因电加热耦合而热损坏，从而失效或烧毁。

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The MOSFET performance degrading induced by electric heating coupling under electromagnetic pulse environment

Strong electromagnetic pulses cause failure of the MOSFET mainly through electrical or thermal breakdown. Therefore, the study of the thermal distribution of MOSFET is of great significance. A three-dimensional(3D) MOSFET is established with appropriate parameters by device simulator software (Sentaurus). The damage effect and degrading mechanism of MOSFET induced by electromagnetic pulse (EMP) are analyzed in detail. The results show that with EMP injection the only hot spot is at the drain-substrate PN junction where it first reaches the melting point of silicon due to heat deposition. Meanwhile, electric field intensity and current density in this area are densely distributed. The device is thermally damaged due to electrical heating coupling and thus fails or burns out.

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来源期刊

2018 IEEE International Conference on Electron Devices and Solid State Circuits (EDSSC)

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