硅片KOH各向异性刻蚀提高刻蚀表面质量的研究

1998 5th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.98EX105) Pub Date : 1998-10-21 DOI:10.1109/ICSICT.1998.785819

Wang Wei, L. Xiaowei, Wang Xilian, L. Yuqiang, Fan Maojun

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引用次数: 2

摘要

实验研究了硅片KOH各向异性刻蚀对刻蚀表面平整度的主要影响。在Si/sub - 3/N/sub - 4/掩膜的Si膜蚀刻中，Si/sub - 3/N/sub - 4/蚀刻和KOH水溶液中的沉积物是主要影响因素。通过机理分析，提出了提高表面质量的有效方法。

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Investigation of KOH anisotropic etching of Si <100> wafers for improving etched surface quality

The main influences of KOH anisotropic etching of Si <100> wafers on etched surface flatness are investigated experimentally. In the Si membrane etching with Si/sub 3/N/sub 4/ mask, the Si/sub 3/N/sub 4/ etching and the sediments in KOH aqueous solution are found as the main influences. The effective method to improve surface quality is presented by the mechanism analysis.

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1998 5th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.98EX105)

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