基于负差分电阻的VHF频段压控振荡器

2013 IEEE XXXIII International Scientific Conference Electronics and Nanotechnology (ELNANO) Pub Date : 2013-04-16 DOI:10.1109/ELNANO.2013.6552016

V. Ulansky, S. F. Ben Suleiman

{"title":"基于负差分电阻的VHF频段压控振荡器","authors":"V. Ulansky, S. F. Ben Suleiman","doi":"10.1109/ELNANO.2013.6552016","DOIUrl":null,"url":null,"abstract":"This paper presents a novel sinusoidal negative differential resistance (NDR) voltage-controlled oscillator (VCO) for VHF band. The VCO circuit is based on a junction field effect transistor (JFET) in combination with a current mirror (CM). Mathematical model of the proposed VCO is described and the start-up conditions are determined. The designed VCO covers the frequency band between 139.8 and 256.2 MHz. It has a phase noise of -111.1 dBc/Hz at 10 kHz offset from carrier, consumes only 6.2mW, suppresses harmonics to better than -31dBc, and achieves a very good figure of merit (FOM) performance of -190 dBc/Hz. The implemented VHF VCO generates low-noise low-distortion signal confirming simulation results.","PeriodicalId":443634,"journal":{"name":"2013 IEEE XXXIII International Scientific Conference Electronics and Nanotechnology (ELNANO)","volume":"3 2 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-04-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":"{\"title\":\"Negative differential resistance based voltage-controlled oscillator for VHF band\",\"authors\":\"V. Ulansky, S. F. Ben Suleiman\",\"doi\":\"10.1109/ELNANO.2013.6552016\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents a novel sinusoidal negative differential resistance (NDR) voltage-controlled oscillator (VCO) for VHF band. The VCO circuit is based on a junction field effect transistor (JFET) in combination with a current mirror (CM). Mathematical model of the proposed VCO is described and the start-up conditions are determined. The designed VCO covers the frequency band between 139.8 and 256.2 MHz. It has a phase noise of -111.1 dBc/Hz at 10 kHz offset from carrier, consumes only 6.2mW, suppresses harmonics to better than -31dBc, and achieves a very good figure of merit (FOM) performance of -190 dBc/Hz. The implemented VHF VCO generates low-noise low-distortion signal confirming simulation results.\",\"PeriodicalId\":443634,\"journal\":{\"name\":\"2013 IEEE XXXIII International Scientific Conference Electronics and Nanotechnology (ELNANO)\",\"volume\":\"3 2 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-04-16\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"7\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2013 IEEE XXXIII International Scientific Conference Electronics and Nanotechnology (ELNANO)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ELNANO.2013.6552016\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 IEEE XXXIII International Scientific Conference Electronics and Nanotechnology (ELNANO)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ELNANO.2013.6552016","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 7

摘要

提出了一种用于甚高频频段的新型正弦负差分电阻压控振荡器(VCO)。压控振荡器电路基于结场效应晶体管(JFET)与电流反射镜(CM)的结合。建立了VCO的数学模型，确定了VCO的启动条件。设计的VCO覆盖139.8 ~ 256.2 MHz频段。在载波偏移量为10 kHz时，相位噪声为-111.1 dBc/Hz，功耗仅为6.2mW，谐波抑制优于-31dBc，并实现了-190 dBc/Hz的优异性能。所实现的甚高频压控振荡器产生了低噪声、低失真的信号，验证了仿真结果。

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Negative differential resistance based voltage-controlled oscillator for VHF band

This paper presents a novel sinusoidal negative differential resistance (NDR) voltage-controlled oscillator (VCO) for VHF band. The VCO circuit is based on a junction field effect transistor (JFET) in combination with a current mirror (CM). Mathematical model of the proposed VCO is described and the start-up conditions are determined. The designed VCO covers the frequency band between 139.8 and 256.2 MHz. It has a phase noise of -111.1 dBc/Hz at 10 kHz offset from carrier, consumes only 6.2mW, suppresses harmonics to better than -31dBc, and achieves a very good figure of merit (FOM) performance of -190 dBc/Hz. The implemented VHF VCO generates low-noise low-distortion signal confirming simulation results.

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来源期刊

2013 IEEE XXXIII International Scientific Conference Electronics and Nanotechnology (ELNANO)

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