0.4 V超低压差分CMOS施密特触发器

2017 Iranian Conference on Electrical Engineering (ICEE) Pub Date : 2017-05-02 DOI:10.1109/IRANIANCEE.2017.7985096

A. Nejati, Yasin Bastan, P. Amiri

{"title":"0.4 V超低压差分CMOS施密特触发器","authors":"A. Nejati, Yasin Bastan, P. Amiri","doi":"10.1109/IRANIANCEE.2017.7985096","DOIUrl":null,"url":null,"abstract":"In this paper, we present an ultra-low voltage differential CMOS Schmitt trigger. Bulk-driven and sub-threshold techniques are used to achieve low voltage operation in the proposed circuit. The regenerative current feedback is also used to generation the hysteresis of the opamp-based Schmitt trigger in this paper. The proposed Schmitt trigger is designed and simulated in 0.18µm CMOS technology and it is operated in 0.4 V supply voltage.","PeriodicalId":161929,"journal":{"name":"2017 Iranian Conference on Electrical Engineering (ICEE)","volume":"46 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-05-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"12","resultStr":"{\"title\":\"0.4 V ultra-low voltage differential CMOS Schmitt trigger\",\"authors\":\"A. Nejati, Yasin Bastan, P. Amiri\",\"doi\":\"10.1109/IRANIANCEE.2017.7985096\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, we present an ultra-low voltage differential CMOS Schmitt trigger. Bulk-driven and sub-threshold techniques are used to achieve low voltage operation in the proposed circuit. The regenerative current feedback is also used to generation the hysteresis of the opamp-based Schmitt trigger in this paper. The proposed Schmitt trigger is designed and simulated in 0.18µm CMOS technology and it is operated in 0.4 V supply voltage.\",\"PeriodicalId\":161929,\"journal\":{\"name\":\"2017 Iranian Conference on Electrical Engineering (ICEE)\",\"volume\":\"46 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2017-05-02\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"12\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2017 Iranian Conference on Electrical Engineering (ICEE)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IRANIANCEE.2017.7985096\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 Iranian Conference on Electrical Engineering (ICEE)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IRANIANCEE.2017.7985096","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 12

摘要

在本文中，我们提出了一种超低电压差分CMOS施密特触发器。采用体积驱动和亚阈值技术实现了电路的低电压工作。本文还利用再生电流反馈来产生基于opamp的施密特触发器的滞回。该触发器采用0.18µm CMOS技术进行设计和仿真，工作电压为0.4 V。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

0.4 V ultra-low voltage differential CMOS Schmitt trigger

In this paper, we present an ultra-low voltage differential CMOS Schmitt trigger. Bulk-driven and sub-threshold techniques are used to achieve low voltage operation in the proposed circuit. The regenerative current feedback is also used to generation the hysteresis of the opamp-based Schmitt trigger in this paper. The proposed Schmitt trigger is designed and simulated in 0.18µm CMOS technology and it is operated in 0.4 V supply voltage.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2017 Iranian Conference on Electrical Engineering (ICEE)

自引率

0.00%

发文量