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引用次数: 5
摘要
我们提出了一种简单,灵活和低成本的MEMS制造工艺,采用深度反应离子蚀刻(DRIE)和晶圆键合技术开发,用于制造平面内高纵横比(HAR)惯性传感器。举例说明了一种两轴惯性装置的设计和制造结果。制备的器件厚度可达140 μ m, HAR为28。与文献中报道的现有方法相比,该工艺的显著特点是:仅使用两个光刻掩模进行单面单晶圆加工,能够制造独立的MEMS以及通过工艺变化进行CMOS兼容的MEMS后处理,使用等离子体蚀刻进行晶圆减薄,有利于MEMS的无粘性干燥释放,以及适合批量加工。
DRIE and Bonding Assisted Low Cost MEMS Processing of In-plane HAR Inertial Sensors
We present a simple, flexible and low cost MEMS fabrication process, developed using deep reactive ion etching (DRIE) and wafer bonding technologies, for manufacturing in-plane high aspect ratio (HAR) inertial sensors. Among examples, the design and fabrication results of a two axis inertial device are presented. Fabricated device thickness ranged up to 140 mum and a HAR of 28 was obtained. Compared to the existing approaches reported in literature, the salient features of the presented process are: single-sided single-wafer processing using just two lithographic masks, capability to fabricate standalone MEMS as well as CMOS compatible MEMS post-processing via process variations, the use of plasma etching for wafer thinning that facilitates stictionless dry-release of MEMS, and its suitability for batch processing.