驱动和键合辅助平面内HAR惯性传感器的低成本MEMS加工

V. Rajaraman, K. Makinwa, P. French
{"title":"驱动和键合辅助平面内HAR惯性传感器的低成本MEMS加工","authors":"V. Rajaraman, K. Makinwa, P. French","doi":"10.1109/ASDAM.2008.4743350","DOIUrl":null,"url":null,"abstract":"We present a simple, flexible and low cost MEMS fabrication process, developed using deep reactive ion etching (DRIE) and wafer bonding technologies, for manufacturing in-plane high aspect ratio (HAR) inertial sensors. Among examples, the design and fabrication results of a two axis inertial device are presented. Fabricated device thickness ranged up to 140 mum and a HAR of 28 was obtained. Compared to the existing approaches reported in literature, the salient features of the presented process are: single-sided single-wafer processing using just two lithographic masks, capability to fabricate standalone MEMS as well as CMOS compatible MEMS post-processing via process variations, the use of plasma etching for wafer thinning that facilitates stictionless dry-release of MEMS, and its suitability for batch processing.","PeriodicalId":306699,"journal":{"name":"2008 International Conference on Advanced Semiconductor Devices and Microsystems","volume":"25 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"DRIE and Bonding Assisted Low Cost MEMS Processing of In-plane HAR Inertial Sensors\",\"authors\":\"V. Rajaraman, K. Makinwa, P. French\",\"doi\":\"10.1109/ASDAM.2008.4743350\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We present a simple, flexible and low cost MEMS fabrication process, developed using deep reactive ion etching (DRIE) and wafer bonding technologies, for manufacturing in-plane high aspect ratio (HAR) inertial sensors. Among examples, the design and fabrication results of a two axis inertial device are presented. Fabricated device thickness ranged up to 140 mum and a HAR of 28 was obtained. Compared to the existing approaches reported in literature, the salient features of the presented process are: single-sided single-wafer processing using just two lithographic masks, capability to fabricate standalone MEMS as well as CMOS compatible MEMS post-processing via process variations, the use of plasma etching for wafer thinning that facilitates stictionless dry-release of MEMS, and its suitability for batch processing.\",\"PeriodicalId\":306699,\"journal\":{\"name\":\"2008 International Conference on Advanced Semiconductor Devices and Microsystems\",\"volume\":\"25 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2008-10-12\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2008 International Conference on Advanced Semiconductor Devices and Microsystems\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ASDAM.2008.4743350\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2008 International Conference on Advanced Semiconductor Devices and Microsystems","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ASDAM.2008.4743350","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 5

摘要

我们提出了一种简单,灵活和低成本的MEMS制造工艺,采用深度反应离子蚀刻(DRIE)和晶圆键合技术开发,用于制造平面内高纵横比(HAR)惯性传感器。举例说明了一种两轴惯性装置的设计和制造结果。制备的器件厚度可达140 μ m, HAR为28。与文献中报道的现有方法相比,该工艺的显著特点是:仅使用两个光刻掩模进行单面单晶圆加工,能够制造独立的MEMS以及通过工艺变化进行CMOS兼容的MEMS后处理,使用等离子体蚀刻进行晶圆减薄,有利于MEMS的无粘性干燥释放,以及适合批量加工。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
DRIE and Bonding Assisted Low Cost MEMS Processing of In-plane HAR Inertial Sensors
We present a simple, flexible and low cost MEMS fabrication process, developed using deep reactive ion etching (DRIE) and wafer bonding technologies, for manufacturing in-plane high aspect ratio (HAR) inertial sensors. Among examples, the design and fabrication results of a two axis inertial device are presented. Fabricated device thickness ranged up to 140 mum and a HAR of 28 was obtained. Compared to the existing approaches reported in literature, the salient features of the presented process are: single-sided single-wafer processing using just two lithographic masks, capability to fabricate standalone MEMS as well as CMOS compatible MEMS post-processing via process variations, the use of plasma etching for wafer thinning that facilitates stictionless dry-release of MEMS, and its suitability for batch processing.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信