SIMOX结构中埋藏氧化物中捕获电子的能级

V. Afanas'ev, A. Revesz, W. Jenkins, H. Hughes
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引用次数: 0

摘要

SIMOX结构的埋藏氧化物(BOX)表现出比热生长SiO/ sub2 /薄膜更强的电子俘获,并含有可带正电的光活性中心。大截面的电子陷阱和光活性中心归因于小Si团簇,其密度与氧注入方式和后续处理有关。这项工作表明,在所有的BOX层中,光活性缺陷都是相同类型的,但它们的大小和密度取决于注入能量、氧剂量和退火条件等。如果在BOX中存在足够的多余硅,那么,除了非晶硅簇外,晶体硅岛也会形成。这两种类型的Si夹杂物的形成和稳定性都与BOX层的受限性质有关,而BOX层的受限性质又受到Si衬底的影响。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Energy levels of electrons trapped in buried oxide of SIMOX structures
The buried oxide (BOX) of SIMOX structures exhibits stronger electron trapping than thermally grown SiO/sub 2/ films and contains photo-active centers which can be positively charged. The electron traps with large cross section and the photo-active centers were ascribed to small Si clusters whose density is related to the oxygen implantation mode and subsequent processing. This work shows that the photo-active defects are of the same type in all the BOX layers but their size and density depend, among others, on the implantation energy, oxygen dose, and annealing conditions. If sufficient excess silicon is present in the BOX, then, in addition to amorphous Si clusters, crystalline Si islands form as well. The formation and stability of both types of Si inclusions are related to the confined nature of the BOX layer which, in turn, is affected by the Si substrate.
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