无结三材料圆柱环绕栅MOSFET线性特性研究

2018 International Conference on Applied Electromagnetics, Signal Processing and Communication (AESPC) Pub Date : 2018-10-01 DOI:10.1109/AESPC44649.2018.9033205

P. K. Jena, S. Swain, Omprakash Acharya, Sarosij Adak

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引用次数: 1

摘要

本文对JLTMCSG MOSFET进行了深入的研究和分析。它与JLDMCSG MOSFET的比较也基于不同的参数变化，如线性度研究，考虑到各种合适的线性度指标，如gm1, gm2, gm3,1-dB压缩点，VIP2, VIP3和IIP3。分析表明，如果设计得当，JLTMCSG MOSFET将具有优异的线性性能。同时，由于降低了漏极引起的阻挡降低，可以减少畸变。它在电场中产生的均匀性更高，适用于微波应用、射频通信和低噪声放大器。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Study of Linearity Performances of Junction-less Triple-Material Cylindrical Surrounding Gate MOSFET

In the proposed work, the study and thorough analysis of JLTMCSG MOSFET has been done. Its comparison with JLDMCSG MOSFET also being done based on different parameter variations like linearity study taking into account various suitable linearity metrics such as gm1, gm2, gm3,1-dB compression point, VIP2, VIP3 and IIP3. The analysis suggests that if designed properly JLTMCSG MOSFET will have superior linearity performance. At the same time distortion can be reduced due to lowered drain induced barrier lowering. It has a higher and more uniformity produced in the electric field which is suitable applications in microwave applications and RF communication and low noise amplifiers.

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2018 International Conference on Applied Electromagnetics, Signal Processing and Communication (AESPC)

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