tiox基器件的双极开关分析及负电阻现象

2010 IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC) Pub Date : 2010-12-01 DOI:10.1109/EDSSC.2010.5713758

Linkai Wang, Ze Jia, T. Ren

{"title":"tiox基器件的双极开关分析及负电阻现象","authors":"Linkai Wang, Ze Jia, T. Ren","doi":"10.1109/EDSSC.2010.5713758","DOIUrl":null,"url":null,"abstract":"This work addresses the negative resistance phenomenon in TiOx-based resistive-switching cells applied in RRAM. The switching behavior of the Ag (or Pt, top)/TiOx/Pt (bottom) structure was also carefully analyzed. The negative resistance phenomenon and switching behavior can be modeled to space-charge-limited conduction (SCLC) mechanism with asymmetric electron trapping centers. A two-variable model based on SCLC is also proposed.","PeriodicalId":356342,"journal":{"name":"2010 IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC)","volume":"95 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Bipolar switching analysis and negative resistance phenomenon in TiOx-based devices\",\"authors\":\"Linkai Wang, Ze Jia, T. Ren\",\"doi\":\"10.1109/EDSSC.2010.5713758\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This work addresses the negative resistance phenomenon in TiOx-based resistive-switching cells applied in RRAM. The switching behavior of the Ag (or Pt, top)/TiOx/Pt (bottom) structure was also carefully analyzed. The negative resistance phenomenon and switching behavior can be modeled to space-charge-limited conduction (SCLC) mechanism with asymmetric electron trapping centers. A two-variable model based on SCLC is also proposed.\",\"PeriodicalId\":356342,\"journal\":{\"name\":\"2010 IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC)\",\"volume\":\"95 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2010-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2010 IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EDSSC.2010.5713758\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EDSSC.2010.5713758","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 2

摘要

这项工作解决了应用于RRAM的tiox基电阻开关电池中的负电阻现象。分析了Ag(或Pt，上)/TiOx/Pt(下)结构的开关行为。负电阻现象和开关行为可以模拟为具有不对称电子俘获中心的空间电荷限制传导(SCLC)机制。提出了一种基于SCLC的双变量模型。

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Bipolar switching analysis and negative resistance phenomenon in TiOx-based devices

This work addresses the negative resistance phenomenon in TiOx-based resistive-switching cells applied in RRAM. The switching behavior of the Ag (or Pt, top)/TiOx/Pt (bottom) structure was also carefully analyzed. The negative resistance phenomenon and switching behavior can be modeled to space-charge-limited conduction (SCLC) mechanism with asymmetric electron trapping centers. A two-variable model based on SCLC is also proposed.

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来源期刊

2010 IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC)

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