R. Day, C.D. Hruska, K. Tai, R. Frye, M. Lau, P. Sullivan
{"title":"在衬底中集成双极元件的硅对硅多芯片模块技术","authors":"R. Day, C.D. Hruska, K. Tai, R. Frye, M. Lau, P. Sullivan","doi":"10.1109/MCMC.1994.292525","DOIUrl":null,"url":null,"abstract":"To address the needs of cost driven, mixed signal applications, we have developed a silicon-on-silicon technology that incorporates both passive and active devices in the module substrate. The technology combines a simple, double-diffused epitaxial bipolar technology with our thin-film MCMs. We describe the basic elements of the technology, typical active device properties and some examples of their use in a low-cost MCM.<<ETX>>","PeriodicalId":292463,"journal":{"name":"Proceedings of IEEE Multi-Chip Module Conference (MCMC-94)","volume":"31 3 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1994-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"20","resultStr":"{\"title\":\"A silicon-on-silicon multichip module technology with integrated bipolar components in the substrate\",\"authors\":\"R. Day, C.D. Hruska, K. Tai, R. Frye, M. Lau, P. Sullivan\",\"doi\":\"10.1109/MCMC.1994.292525\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"To address the needs of cost driven, mixed signal applications, we have developed a silicon-on-silicon technology that incorporates both passive and active devices in the module substrate. The technology combines a simple, double-diffused epitaxial bipolar technology with our thin-film MCMs. We describe the basic elements of the technology, typical active device properties and some examples of their use in a low-cost MCM.<<ETX>>\",\"PeriodicalId\":292463,\"journal\":{\"name\":\"Proceedings of IEEE Multi-Chip Module Conference (MCMC-94)\",\"volume\":\"31 3 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1994-03-15\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"20\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of IEEE Multi-Chip Module Conference (MCMC-94)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MCMC.1994.292525\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of IEEE Multi-Chip Module Conference (MCMC-94)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MCMC.1994.292525","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A silicon-on-silicon multichip module technology with integrated bipolar components in the substrate
To address the needs of cost driven, mixed signal applications, we have developed a silicon-on-silicon technology that incorporates both passive and active devices in the module substrate. The technology combines a simple, double-diffused epitaxial bipolar technology with our thin-film MCMs. We describe the basic elements of the technology, typical active device properties and some examples of their use in a low-cost MCM.<>