硅衬底上645 V准垂直GaN功率晶体管

2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD) Pub Date : 2018-05-13 DOI:10.1109/ISPSD.2018.8393647

Chao Liu, R. Khadar, E. Matioli

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引用次数: 4

摘要

在本文中，我们提出了由6.7 μm厚的n-p-n异质结构组成的GaN-on-Si垂直晶体管，通过MOCVD在6英寸硅衬底上生长。所制备的垂直沟槽栅mosfet表现出e模式工作，阈值电压为3.3 V，通/关比超过108。实现了6.8 mň-cm2的导通电阻和645 V的高断态击穿电压。这些结果显示了GaN-on-Si平台在下一代具有成本效益的电力电子产品中的巨大潜力。

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645 V quasi-vertical GaN power transistors on silicon substrates

In this paper, we present GaN-on-Si vertical transistors consisting of a 6.7 μm thick n-p-n heterostructure grown on 6-inch silicon substrates by MOCVD. The fabricated vertical trench gate MOSFETs exhibited E-mode operation with a threshold voltage of 3.3 V and an on/off ratio of over 108. A specific on-resistance of 6.8 mň-cm2 and a high off-state breakdown voltage of 645 V were achieved. These results show the great potential of the GaN-on-Si platform for the next generation of cost-effective power electronics.

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2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD)

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