利用TBP实现常规条件下选择性LP-MOVPE再生埋置SI-BH激光器

Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362) Pub Date : 1999-05-16 DOI:10.1109/ICIPRM.1999.773753

H. Sik, S. Bouchoule, S. Slempkes

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引用次数: 0

摘要

研究了高电阻率(高达10/sup / 9/ /spl ω /.cm)掺铁半绝缘InP外延层的选择性平面再生制备埋藏异质结构激光器的限流层。以叔丁基膦(TBP)、三甲基lindium (TMI)和二环戊二烯铁(Fe(C5H5)2)为反应气体，采用低压有机金属气相外延法(LP-MOVPE)在图图化、非平面异质结构平台上生长外延层。这种选择性生长是围绕激光条纹设计的，没有选择生长掩膜的悬垂。与标准BRS激光器结构相比，SI-BH激光器具有良好的静态特性。

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Realisation of SI-BH lasers buried by selective LP-MOVPE regrowth under conventional conditions using TBP

Selective planar regrowth of high resistivity (as high as 10/sup 9/ /spl Omega/.cm) Fe-doped semi-insulating InP epitaxial layers has been studied to fabricate current confining layers for buried heterostructure lasers. The epitaxial layers were grown with conventional growth conditions on patterned, nonplanar heterostructure mesa by low-pressure organometallic vapor phase epitaxy (LP-MOVPE) with tertiarybutylphosphine (TBP), trimethylindium (TMI) and iron dicyclopentadienyl (Fe(C5H5)2) as the reactant gases. This selective growth has been developed around laser stripes designed without overhang of the selective growth mask. And shows very good static characteristics of the SI-BH lasers as compared to standard BRS laser structures.

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Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362)

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