铟δ掺杂对LT GaAs中As团簇空间分布的控制

Proceedings of Semiconducting and Semi-Insulating Materials Conference Pub Date : 1996-04-29 DOI:10.1109/SIM.1996.570871

V. Chaldyshev, N. Bert, N. Faleev, A. E. Kunitsyn, V. Tret’yakov, V. Preobrazhenskii, M. A. Putyato, B. Semyagin

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引用次数: 0

摘要

用分子束外延法在200/spl度/C条件下生长砷化镓，研究了过量砷在In δ层的二维析出。我们已经展示了在均匀掺杂Si供体或Be受体和未掺杂的基质中控制As簇的空间分布的机会。找到并讨论了制备薄而平的簇片的最适宜条件。

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Control of spatial distribution of As clusters in LT GaAs by indium delta doping

Two-dimensional precipitation of excess As at In delta-layers has been studied in GaAs grown by molecular beam epitaxy at 200/spl deg/C. We have shown an opportunity to control spatial distribution of As clusters in the matrices uniformly doped with Si donors or Be accepters and undoped as well. The most appropriate conditions for thin and flat cluster sheets have been found and discussed.

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Proceedings of Semiconducting and Semi-Insulating Materials Conference

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