{"title":"从直流到毫米波的RF-MEMS","authors":"T. Nishino, M. Miyazaki, Y. Yoshida, M. Taguchi","doi":"10.1109/MELCON.2006.1653097","DOIUrl":null,"url":null,"abstract":"We have developed a hollow cavity structure and two types of RF-MEMS switches. The one has less parasitic capacitance to be used in high frequency band with the hollow structure. The other has compact structure with a common bias electrode to a signal line. This type suits for the cellular phone frequencies. In this paper, we introduce both of the switches, and discuss on the future applications of the RF-MEMS","PeriodicalId":299928,"journal":{"name":"MELECON 2006 - 2006 IEEE Mediterranean Electrotechnical Conference","volume":"19 7 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"RF-MEMS from DC to Millimeter-wave\",\"authors\":\"T. Nishino, M. Miyazaki, Y. Yoshida, M. Taguchi\",\"doi\":\"10.1109/MELCON.2006.1653097\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We have developed a hollow cavity structure and two types of RF-MEMS switches. The one has less parasitic capacitance to be used in high frequency band with the hollow structure. The other has compact structure with a common bias electrode to a signal line. This type suits for the cellular phone frequencies. In this paper, we introduce both of the switches, and discuss on the future applications of the RF-MEMS\",\"PeriodicalId\":299928,\"journal\":{\"name\":\"MELECON 2006 - 2006 IEEE Mediterranean Electrotechnical Conference\",\"volume\":\"19 7 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2006-05-16\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"MELECON 2006 - 2006 IEEE Mediterranean Electrotechnical Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MELCON.2006.1653097\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"MELECON 2006 - 2006 IEEE Mediterranean Electrotechnical Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MELCON.2006.1653097","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
We have developed a hollow cavity structure and two types of RF-MEMS switches. The one has less parasitic capacitance to be used in high frequency band with the hollow structure. The other has compact structure with a common bias electrode to a signal line. This type suits for the cellular phone frequencies. In this paper, we introduce both of the switches, and discuss on the future applications of the RF-MEMS
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