{"title":"高功率照明下行波光电探测器的严格分析","authors":"D. Pasalic, R. Vahldieck, Andreas Walter Aste","doi":"10.1109/MWSYM.2003.1212627","DOIUrl":null,"url":null,"abstract":"An efficient hybrid method for the rigorous analysis of traveling-wave photodetectors (TWPDs) is presented. The method consists of a combination of the 2D drift-diffusion based semiconductor simulation in conjunction with a full-wave EM analysis of the overall structure. While the 2D simulation determines the conductivity profile of the semiconductor layers under illuminations of different optical power levels, the 3D simulation characterizes the corresponding RF performance of the TWPD. Comparison with available experimental data has shown excellent agreement.","PeriodicalId":252251,"journal":{"name":"IEEE MTT-S International Microwave Symposium Digest, 2003","volume":"33 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Rigorous analysis of traveling wave photodetectors under high-power illumination\",\"authors\":\"D. Pasalic, R. Vahldieck, Andreas Walter Aste\",\"doi\":\"10.1109/MWSYM.2003.1212627\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"An efficient hybrid method for the rigorous analysis of traveling-wave photodetectors (TWPDs) is presented. The method consists of a combination of the 2D drift-diffusion based semiconductor simulation in conjunction with a full-wave EM analysis of the overall structure. While the 2D simulation determines the conductivity profile of the semiconductor layers under illuminations of different optical power levels, the 3D simulation characterizes the corresponding RF performance of the TWPD. Comparison with available experimental data has shown excellent agreement.\",\"PeriodicalId\":252251,\"journal\":{\"name\":\"IEEE MTT-S International Microwave Symposium Digest, 2003\",\"volume\":\"33 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2003-06-08\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE MTT-S International Microwave Symposium Digest, 2003\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MWSYM.2003.1212627\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE MTT-S International Microwave Symposium Digest, 2003","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MWSYM.2003.1212627","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Rigorous analysis of traveling wave photodetectors under high-power illumination
An efficient hybrid method for the rigorous analysis of traveling-wave photodetectors (TWPDs) is presented. The method consists of a combination of the 2D drift-diffusion based semiconductor simulation in conjunction with a full-wave EM analysis of the overall structure. While the 2D simulation determines the conductivity profile of the semiconductor layers under illuminations of different optical power levels, the 3D simulation characterizes the corresponding RF performance of the TWPD. Comparison with available experimental data has shown excellent agreement.
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