重论SiO/ sub2 /厚膜的介电击穿机理

2004 Proceedings of the 16th International Symposium on Power Semiconductor Devices and ICs Pub Date : 2004-05-24 DOI:10.1109/WCT.2004.239938

K. Kubota, Y. Kamakura, K. Taniguchi, Y. Sugahara, R. Shimizu

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引用次数: 4

摘要

研究了厚(T/sub - ox/>15 nm) SiO/sub - 2/薄膜的介电击穿，重点研究了其统计特性。在不同的偏压条件下，使用Fowler-Nordheim和衬底热孔注入技术测量了随时间变化的介电击穿。结果表明，在厚氧化膜中，威布尔斜率是应力条件的函数，比渗流理论预测的值要小得多。讨论了困孔对击穿统计量的影响。

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Dielectric breakdown mechanism in thick SiO/sub 2/ films revisited

The dielectric breakdown in thick (T/sub ox/>15 nm) SiO/sub 2/ films is examined, focusing on its statistical properties. Time-dependent dielectric breakdown is measured using the Fowler-Nordheim and the substrate hot hole injection techniques, under various bias conditions. It is demonstrated that in thick oxide films, the Weibull slope is a function of the stress condition, and it is much smaller than the value predicted by the percolation theory. We discuss the effect of trapped holes on the breakdown statistics.

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2004 Proceedings of the 16th International Symposium on Power Semiconductor Devices and ICs

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