金属栅极(TaSiN)和高k介电介质FDSOI器件的温度运行

ESSDERC '03. 33rd Conference on European Solid-State Device Research, 2003. Pub Date : 2003-09-16 DOI:10.1109/ESSDERC.2003.1256941

J. Pretet, A. Vandooren, S. Ciistoloveanu

{"title":"金属栅极(TaSiN)和高k介电介质FDSOI器件的温度运行","authors":"J. Pretet, A. Vandooren, S. Ciistoloveanu","doi":"10.1109/ESSDERC.2003.1256941","DOIUrl":null,"url":null,"abstract":"Experimental results for low and high temperature operation are presented on advanced FDSOI transistors with mid-gap metal gated thin film and high-k dielectric. The temperature dependence of the threshold voltage, subthreshold swing, transconductance and electron mobility is used to analyze the quality of Si film/high-k interface as well as transport mechanisms.","PeriodicalId":350452,"journal":{"name":"ESSDERC '03. 33rd Conference on European Solid-State Device Research, 2003.","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-09-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"9","resultStr":"{\"title\":\"Temperature operation of FDSOI devices with metal gate (TaSiN) and high-k dielectric\",\"authors\":\"J. Pretet, A. Vandooren, S. Ciistoloveanu\",\"doi\":\"10.1109/ESSDERC.2003.1256941\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Experimental results for low and high temperature operation are presented on advanced FDSOI transistors with mid-gap metal gated thin film and high-k dielectric. The temperature dependence of the threshold voltage, subthreshold swing, transconductance and electron mobility is used to analyze the quality of Si film/high-k interface as well as transport mechanisms.\",\"PeriodicalId\":350452,\"journal\":{\"name\":\"ESSDERC '03. 33rd Conference on European Solid-State Device Research, 2003.\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2003-09-16\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"9\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"ESSDERC '03. 33rd Conference on European Solid-State Device Research, 2003.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ESSDERC.2003.1256941\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"ESSDERC '03. 33rd Conference on European Solid-State Device Research, 2003.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ESSDERC.2003.1256941","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 9

摘要

介绍了采用中隙金属门控薄膜和高k介电介质的新型FDSOI晶体管的低温和高温工作实验结果。利用阈值电压、亚阈值摆动、跨导和电子迁移率的温度依赖性分析了Si膜/高k界面的质量及其输运机制。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Temperature operation of FDSOI devices with metal gate (TaSiN) and high-k dielectric

Experimental results for low and high temperature operation are presented on advanced FDSOI transistors with mid-gap metal gated thin film and high-k dielectric. The temperature dependence of the threshold voltage, subthreshold swing, transconductance and electron mobility is used to analyze the quality of Si film/high-k interface as well as transport mechanisms.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

ESSDERC '03. 33rd Conference on European Solid-State Device Research, 2003.

自引率

0.00%

发文量