40ghz带宽功率微波负载

2020 International Conference on Actual Problems of Electron Devices Engineering (APEDE) Pub Date : 2020-09-24 DOI:10.1109/APEDE48864.2020.9255412

A. N. Rebrov, A. Grigoriev

{"title":"40ghz带宽功率微波负载","authors":"A. N. Rebrov, A. Grigoriev","doi":"10.1109/APEDE48864.2020.9255412","DOIUrl":null,"url":null,"abstract":"The work describes a power microwave load with a bandwidth of 40 GHz. The load has silicon carbide (SiC) base and dissipated power of 50 W. The load has minor dimensions and simple, easy to produce construction. The temperature distribution on the surface of the resistive film is given.","PeriodicalId":277559,"journal":{"name":"2020 International Conference on Actual Problems of Electron Devices Engineering (APEDE)","volume":"29 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2020-09-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Power Microwave Load with 40 GHz Bandwidth\",\"authors\":\"A. N. Rebrov, A. Grigoriev\",\"doi\":\"10.1109/APEDE48864.2020.9255412\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The work describes a power microwave load with a bandwidth of 40 GHz. The load has silicon carbide (SiC) base and dissipated power of 50 W. The load has minor dimensions and simple, easy to produce construction. The temperature distribution on the surface of the resistive film is given.\",\"PeriodicalId\":277559,\"journal\":{\"name\":\"2020 International Conference on Actual Problems of Electron Devices Engineering (APEDE)\",\"volume\":\"29 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2020-09-24\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2020 International Conference on Actual Problems of Electron Devices Engineering (APEDE)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/APEDE48864.2020.9255412\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 International Conference on Actual Problems of Electron Devices Engineering (APEDE)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/APEDE48864.2020.9255412","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 1

摘要

本文描述了一种带宽为40ghz的功率微波负载。负载采用碳化硅(SiC)基材，耗散功率为50w。该载荷尺寸小，结构简单，易于生产。给出了电阻膜表面的温度分布。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Power Microwave Load with 40 GHz Bandwidth

The work describes a power microwave load with a bandwidth of 40 GHz. The load has silicon carbide (SiC) base and dissipated power of 50 W. The load has minor dimensions and simple, easy to produce construction. The temperature distribution on the surface of the resistive film is given.

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2020 International Conference on Actual Problems of Electron Devices Engineering (APEDE)

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