基于0.18 μm SiGe BiCMOS技术的四线性56Gbaud PAM4跨阻放大器

Hui Wang, Yingmei Chen, Yuan Gao, Ning Li, Zhen Zhang, Chao Guo, Jiquan Li
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引用次数: 1

摘要

本文提出了一种低噪声、高线性度的56Gbaud PAM4跨阻放大器(TIA),它能满足新兴的400G以太网标准的要求。为了满足高带宽、低噪声的要求,TIA的输入级采用了电感分流反馈技术。在TIA后级联一个连续时间线性均衡器(CTLE)来补偿由光电二极管(PD)寄生电容引起的带宽损失。可变增益放大器(VGA),提供18db增益控制范围,可容纳输入电流高达1 mApp,组延迟变化小。TIA采用0.18μm SiGe BiCMOS技术实现。后置仿真结果表明,在带宽为30GHz、输入参考噪声电流为2.3uArms的情况下,TIA的跨阻增益为74.4dB。输出缓冲器提供600mV输出摆幅,整个四通道功耗为600mW。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A Quad Linear 56Gbaud PAM4 Transimpedance Amplifier in 0.18 μm SiGe BiCMOS Technology
low noise and high linearity 56Gbaud PAM4 transimpedance amplifier (TIA) is presented in this paper, and it meets the requirements of emerging 400G Ethernet standards. The inductive shunt feedback technique is used in input stage of TIA to meet the specifications of high bandwidth and low noise. A Continuous-time linear equalizer (CTLE) is cascaded after TIA to compensate loss of bandwidth which caused by Photo Diode (PD) parasitic capacitance. A variable gain amplifier (VGA) which provides 18-dB gain control range accommodates input currents up to 1 mApp with little group delay variation. The TIA is implemented in 0.18μm SiGe BiCMOS technology. Post simulation results show that TIA provides 74.4dB transimpedance gain while bandwidth is 30GHz and input referred noise current is 2.3uArms. The output buffer provides 600mV output swing, and power consumption of the whole four channels is 600mW.
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