900MHz LTE频段LD-MOSFET射频放大器多段阶跃线阻抗匹配的宽带性能

2015 International Conference on Electrical Engineering and Informatics (ICEEI) Pub Date : 2015-12-17 DOI:10.1109/ICEEI.2015.7352522

B. R. Alam

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引用次数: 6

摘要

在900MHz LTE频段，采用宽带阻抗匹配方法设计了一种基于LD-MOSFET的射频放大器，并对其进行了宽带射频特性分析。在输入端和输出端分别采用2段和3段阶跃线结合微条纹结构的最终a /4波线实现宽带匹配阻抗。该LD-MOSFET射频放大器显示S21的宽带性能，测量范围为800MHz至1GHz，中心频率为900MHz。S11和S22从800MHz到900MHz的测量显示宽带行为，两个圆形曲线都以原点为中心。在900MHz时，S21的非优化阻抗匹配结果为2.2 A 62°或约6.9dB。

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Broadband performance of multi-section step-line impedance matching of LD-MOSFET RF amplifier at 900MHz LTE band

Design and broadband rf characterization of an RF Amplifier using LD-MOSFET with broadband impedance matching approach has been performed at 900MHz LTE band. Broadband matching impedance using 2-section and 3-section step-line combined with a final A/4-wave line of microstripe structures have been implemented at the input and output, respectively. The LD-MOSFET RF Ampilifier shows broadband performance of S21 measured from 800MHz to 1GHz with center frequency at 900MHz. S11 and S22 measurement from 800MHz to 900MHz shows broadband behavior with both circular curves centering the origin. Non optimized impedance matching results in S21 of 2.2 A 62° or about 6.9dB in magnitude at 900MHz.

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2015 International Conference on Electrical Engineering and Informatics (ICEEI)

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