{"title":"微波晶体管——过去20年","authors":"F. Schwierz","doi":"10.1109/ICCDCS.2000.869833","DOIUrl":null,"url":null,"abstract":"This paper provides an overview of the evolution of microwave transistors during the last 20 years. Following a discussion of the situation in 1980 important developments and trends in the field are reviewed. Advanced transistor structures and the semiconductor materials used are examined and the current state of the art of microwave transistors is highlighted.","PeriodicalId":301003,"journal":{"name":"Proceedings of the 2000 Third IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.00TH8474)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"Microwave transistors-the last 20 years\",\"authors\":\"F. Schwierz\",\"doi\":\"10.1109/ICCDCS.2000.869833\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper provides an overview of the evolution of microwave transistors during the last 20 years. Following a discussion of the situation in 1980 important developments and trends in the field are reviewed. Advanced transistor structures and the semiconductor materials used are examined and the current state of the art of microwave transistors is highlighted.\",\"PeriodicalId\":301003,\"journal\":{\"name\":\"Proceedings of the 2000 Third IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.00TH8474)\",\"volume\":\"15 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2000-03-15\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the 2000 Third IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.00TH8474)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICCDCS.2000.869833\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 2000 Third IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.00TH8474)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICCDCS.2000.869833","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
This paper provides an overview of the evolution of microwave transistors during the last 20 years. Following a discussion of the situation in 1980 important developments and trends in the field are reviewed. Advanced transistor structures and the semiconductor materials used are examined and the current state of the art of microwave transistors is highlighted.