{"title":"应变松弛对AlGaN/GaN hemt漏导的影响","authors":"A. Bellakhdar, A. Telia, L. Semra, A. Soltani","doi":"10.1109/ICENGTECHNOL.2012.6396129","DOIUrl":null,"url":null,"abstract":"The aim of this work is to study the potential offered by microwave power in the device AlmGa1-mN/GaN HEMT. The effects of technological and electrical parameters such as the aluminum mole fraction \"m\", the thickness of the AlGaN doped layer \"dd\" and doping concentration \"Nd\" in the output conductance are studied taking into account the effects of spontaneous and piezoelectric polarizations in the heterojunction AlGaN/GaN and the relaxation of the crystal lattice induced by the aluminum mole fraction. We presented an analytical model for the electrons concentration \"ns\" in the 2DEG and the current Ids in the channel for strong inversion regime by solving the Poisson equation and Schrödinger self-consistent calculations. From the analytical model of the current Ids including the effects of spontaneous and piezoelectric polarizations, and lattice relaxation, the output conductance gds according to the voltage Vds are deduced. We note that, the increasing of \"m\" and \"Nd\" increase the carrier density \"ns\" in the 2DEG. Although, the increase of the doped layer thickness increases the output conductance. The influence of the crystal lattice relaxation on the electrical performance acts directly on the threshold voltage if the value of the mole fraction exceeds 0.38.","PeriodicalId":149484,"journal":{"name":"2012 International Conference on Engineering and Technology (ICET)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-12-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Effect of strain relaxation on the drain conductance in AlGaN/GaN HEMTs\",\"authors\":\"A. Bellakhdar, A. Telia, L. Semra, A. Soltani\",\"doi\":\"10.1109/ICENGTECHNOL.2012.6396129\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The aim of this work is to study the potential offered by microwave power in the device AlmGa1-mN/GaN HEMT. The effects of technological and electrical parameters such as the aluminum mole fraction \\\"m\\\", the thickness of the AlGaN doped layer \\\"dd\\\" and doping concentration \\\"Nd\\\" in the output conductance are studied taking into account the effects of spontaneous and piezoelectric polarizations in the heterojunction AlGaN/GaN and the relaxation of the crystal lattice induced by the aluminum mole fraction. We presented an analytical model for the electrons concentration \\\"ns\\\" in the 2DEG and the current Ids in the channel for strong inversion regime by solving the Poisson equation and Schrödinger self-consistent calculations. From the analytical model of the current Ids including the effects of spontaneous and piezoelectric polarizations, and lattice relaxation, the output conductance gds according to the voltage Vds are deduced. We note that, the increasing of \\\"m\\\" and \\\"Nd\\\" increase the carrier density \\\"ns\\\" in the 2DEG. Although, the increase of the doped layer thickness increases the output conductance. The influence of the crystal lattice relaxation on the electrical performance acts directly on the threshold voltage if the value of the mole fraction exceeds 0.38.\",\"PeriodicalId\":149484,\"journal\":{\"name\":\"2012 International Conference on Engineering and Technology (ICET)\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-12-31\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2012 International Conference on Engineering and Technology (ICET)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICENGTECHNOL.2012.6396129\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 International Conference on Engineering and Technology (ICET)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICENGTECHNOL.2012.6396129","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Effect of strain relaxation on the drain conductance in AlGaN/GaN HEMTs
The aim of this work is to study the potential offered by microwave power in the device AlmGa1-mN/GaN HEMT. The effects of technological and electrical parameters such as the aluminum mole fraction "m", the thickness of the AlGaN doped layer "dd" and doping concentration "Nd" in the output conductance are studied taking into account the effects of spontaneous and piezoelectric polarizations in the heterojunction AlGaN/GaN and the relaxation of the crystal lattice induced by the aluminum mole fraction. We presented an analytical model for the electrons concentration "ns" in the 2DEG and the current Ids in the channel for strong inversion regime by solving the Poisson equation and Schrödinger self-consistent calculations. From the analytical model of the current Ids including the effects of spontaneous and piezoelectric polarizations, and lattice relaxation, the output conductance gds according to the voltage Vds are deduced. We note that, the increasing of "m" and "Nd" increase the carrier density "ns" in the 2DEG. Although, the increase of the doped layer thickness increases the output conductance. The influence of the crystal lattice relaxation on the electrical performance acts directly on the threshold voltage if the value of the mole fraction exceeds 0.38.
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