{"title":"45纳米器件及未来器件的闪光灯退火最新技术","authors":"H. Kiyama","doi":"10.1109/RTP.2006.367983","DOIUrl":null,"url":null,"abstract":"FLA (flash lamp annealing) is used in 65nm generation devices manufacturing. For next 45nm and future generation devices, we have picked up 3 key subjects related to milli-second annealing: process controllability, S/D (source drain) activation, silicidation. No need to say, process controllability is very important for device manufacturing. And process requirement for S/D activation and silicidation controllability is becoming more and more severe. Under evaluation of these subjects, it became clear that FLA technology is still a hopeful candidate for 45nm device and future","PeriodicalId":114586,"journal":{"name":"2006 14th IEEE International Conference on Advanced Thermal Processing of Semiconductors","volume":"78 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Flash Lamp Annealing Latest Technology for 45nm device and Future devices\",\"authors\":\"H. Kiyama\",\"doi\":\"10.1109/RTP.2006.367983\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"FLA (flash lamp annealing) is used in 65nm generation devices manufacturing. For next 45nm and future generation devices, we have picked up 3 key subjects related to milli-second annealing: process controllability, S/D (source drain) activation, silicidation. No need to say, process controllability is very important for device manufacturing. And process requirement for S/D activation and silicidation controllability is becoming more and more severe. Under evaluation of these subjects, it became clear that FLA technology is still a hopeful candidate for 45nm device and future\",\"PeriodicalId\":114586,\"journal\":{\"name\":\"2006 14th IEEE International Conference on Advanced Thermal Processing of Semiconductors\",\"volume\":\"78 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2006-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2006 14th IEEE International Conference on Advanced Thermal Processing of Semiconductors\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/RTP.2006.367983\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2006 14th IEEE International Conference on Advanced Thermal Processing of Semiconductors","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RTP.2006.367983","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Flash Lamp Annealing Latest Technology for 45nm device and Future devices
FLA (flash lamp annealing) is used in 65nm generation devices manufacturing. For next 45nm and future generation devices, we have picked up 3 key subjects related to milli-second annealing: process controllability, S/D (source drain) activation, silicidation. No need to say, process controllability is very important for device manufacturing. And process requirement for S/D activation and silicidation controllability is becoming more and more severe. Under evaluation of these subjects, it became clear that FLA technology is still a hopeful candidate for 45nm device and future
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