毫米波MEMS 7级介电块移相器的相位误差和非线性研究

N. Somjit, G. Stemme, J. Oberhammer
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引用次数: 7

摘要

本文研究了一种新型的7级二进制编码毫米波MEMS可重构介质块移相器的相位误差和非线性特性,该移相器在75 - 110ghz w波段具有最佳性能。二进制编码的7级移相器通过放置λ/2长的高电阻硅介质块构建在三维微加工共面波导传输线上,该介质块可由MEMS静电致动器垂直位移。每个块的介电常数是通过在结构中蚀刻周期性图案而人工定制的。15°、30°和45°的相位针对75 GHz进行了优化,并放入7级移相器的编码配置中,以创建二进制编码的15°+;30°+5×45°7级移相器,其总相移为19×15°步长270°。在标称频率为75 GHz时,二值编码移相器的回波损耗小于- 17 dB,插入损耗小于- 3.5 dB;在110 GHz时,回波损耗为- 12 dB,插入损耗为- 4 dB。测量结果还表明,二进制编码移相器在10-110 GHz范围内具有很好的线性移相性能。在所有可能的组合中,75 GHz的绝对相位误差与其标称值的平均值为2.61°,标准差为1.58°,最大误差为6°(240°)。对于10-110 GHz的频率,所有可能的组合在特定频率下的相对相位误差小于最大相移的3%。7级二进制编码移相器在75 GHz时性能为71.1°/dB和490.02°/cm,在110 GHz时性能为98.3°/dB和715.6°/cm。根据测量的自调制行为,在总输入功率为40 dBm时,三阶互调(IM)产物电平为−82.35 dBc,三阶互调截距点(IIP3)为49.15 dBm,采用40 N/m的机械弹簧常数。传统的MEMS移相器采用薄金属桥,限制了电流处理,即使在轻微升高的温度下也会出现疲劳,与此相反,这种新型移相器概念仅受传输线本身的功率处理的限制,这一点已通过3 GHz下40 dBm的温度测量和电热有限元分析的集皮效应适应外推到75 GHz来证明。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Phase error and nonlinearity investigation of millimeter-wave MEMS 7-stage dielectric-block phase shifters
This paper reports on phase error and nonlinearity investigation of a novel binary-coded 7-stage millimeter-wave MEMS reconfigurable dielectric-block phase shifter with best performance optimized for 75–110-GHz W-band. The binary-coded 7-stage phase shifter is constructed on top of a 3D micromachined coplanar waveguide transmission line by placing λ/2-long high-resistivity silicon dielectric blocks which can be displaced vertically by MEMS electrostatic actuators. The dielectric constant of each block is artificially tailor-made by etching a periodic pattern into the structure. Stages of 15°, 30° and 45° are optimized for 75 GHz and put into a coded configuration of a 7-stage phase shifter to create a binary-coded 15°+;30°+5×45° 7-stage phase shifter with a total phase shift of 270° in 19×15° steps. The binary-coded phase shifter shows a return loss better than −17 dB and an insertion loss less than −3.5 dB at the nominal frequency of 75 GHz, and a return loss of −12 dB and insertion loss of −4 dB at 110 GHz. The measurement results also show that the binary-coded phase shifter performs a very linear phase shift from 10–110 GHz. The absolute phase error at 75 GHz from its nominal value has an average of 2.61° at a standard deviation of 1.58° for all possible combinations, and the maximum error is 6° (for 240°). For frequencies from 10–110 GHz, all possible combinations have a relative phase error of less than 3% of the maximum phase shift at the specific frequencies. The 7-stage binary-coded phase shifter performs 71.1°/dB and 490.02°/cm at 75 GHz, and 98.3°/dB and 715.6°/cm at 110 GHz. From the measured self-modulation behavior the third-order intermodulation (IM) products level are derived to −82.35 dBc at a total input power of 40 dBm with the third-order IM intercept point (IIP3) of 49.15 dBm, employing a mechanical spring constant of 40 N/m. In contrast to conventional MEMS phase shifters which employ thin metallic bridges which limit the current handling and show fatigue even at slightly elevated temperatures, this novel phase-shifter concept is only limited by the power handling of the transmission line itself, which is proven by temperature measurements at 40 dBm at 3 GHz and skin effect adapted extrapolation to 75 GHz by electro-thermal FEM analysis.
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