{"title":"毫米波MEMS 7级介电块移相器的相位误差和非线性研究","authors":"N. Somjit, G. Stemme, J. Oberhammer","doi":"10.1109/EUMC.2009.5296269","DOIUrl":null,"url":null,"abstract":"This paper reports on phase error and nonlinearity investigation of a novel binary-coded 7-stage millimeter-wave MEMS reconfigurable dielectric-block phase shifter with best performance optimized for 75–110-GHz W-band. The binary-coded 7-stage phase shifter is constructed on top of a 3D micromachined coplanar waveguide transmission line by placing λ/2-long high-resistivity silicon dielectric blocks which can be displaced vertically by MEMS electrostatic actuators. The dielectric constant of each block is artificially tailor-made by etching a periodic pattern into the structure. Stages of 15°, 30° and 45° are optimized for 75 GHz and put into a coded configuration of a 7-stage phase shifter to create a binary-coded 15°+;30°+5×45° 7-stage phase shifter with a total phase shift of 270° in 19×15° steps. The binary-coded phase shifter shows a return loss better than −17 dB and an insertion loss less than −3.5 dB at the nominal frequency of 75 GHz, and a return loss of −12 dB and insertion loss of −4 dB at 110 GHz. The measurement results also show that the binary-coded phase shifter performs a very linear phase shift from 10–110 GHz. The absolute phase error at 75 GHz from its nominal value has an average of 2.61° at a standard deviation of 1.58° for all possible combinations, and the maximum error is 6° (for 240°). For frequencies from 10–110 GHz, all possible combinations have a relative phase error of less than 3% of the maximum phase shift at the specific frequencies. The 7-stage binary-coded phase shifter performs 71.1°/dB and 490.02°/cm at 75 GHz, and 98.3°/dB and 715.6°/cm at 110 GHz. From the measured self-modulation behavior the third-order intermodulation (IM) products level are derived to −82.35 dBc at a total input power of 40 dBm with the third-order IM intercept point (IIP3) of 49.15 dBm, employing a mechanical spring constant of 40 N/m. In contrast to conventional MEMS phase shifters which employ thin metallic bridges which limit the current handling and show fatigue even at slightly elevated temperatures, this novel phase-shifter concept is only limited by the power handling of the transmission line itself, which is proven by temperature measurements at 40 dBm at 3 GHz and skin effect adapted extrapolation to 75 GHz by electro-thermal FEM analysis.","PeriodicalId":148226,"journal":{"name":"2009 European Microwave Integrated Circuits Conference (EuMIC)","volume":"35 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2009-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":"{\"title\":\"Phase error and nonlinearity investigation of millimeter-wave MEMS 7-stage dielectric-block phase shifters\",\"authors\":\"N. Somjit, G. Stemme, J. Oberhammer\",\"doi\":\"10.1109/EUMC.2009.5296269\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper reports on phase error and nonlinearity investigation of a novel binary-coded 7-stage millimeter-wave MEMS reconfigurable dielectric-block phase shifter with best performance optimized for 75–110-GHz W-band. The binary-coded 7-stage phase shifter is constructed on top of a 3D micromachined coplanar waveguide transmission line by placing λ/2-long high-resistivity silicon dielectric blocks which can be displaced vertically by MEMS electrostatic actuators. The dielectric constant of each block is artificially tailor-made by etching a periodic pattern into the structure. Stages of 15°, 30° and 45° are optimized for 75 GHz and put into a coded configuration of a 7-stage phase shifter to create a binary-coded 15°+;30°+5×45° 7-stage phase shifter with a total phase shift of 270° in 19×15° steps. The binary-coded phase shifter shows a return loss better than −17 dB and an insertion loss less than −3.5 dB at the nominal frequency of 75 GHz, and a return loss of −12 dB and insertion loss of −4 dB at 110 GHz. The measurement results also show that the binary-coded phase shifter performs a very linear phase shift from 10–110 GHz. The absolute phase error at 75 GHz from its nominal value has an average of 2.61° at a standard deviation of 1.58° for all possible combinations, and the maximum error is 6° (for 240°). For frequencies from 10–110 GHz, all possible combinations have a relative phase error of less than 3% of the maximum phase shift at the specific frequencies. The 7-stage binary-coded phase shifter performs 71.1°/dB and 490.02°/cm at 75 GHz, and 98.3°/dB and 715.6°/cm at 110 GHz. From the measured self-modulation behavior the third-order intermodulation (IM) products level are derived to −82.35 dBc at a total input power of 40 dBm with the third-order IM intercept point (IIP3) of 49.15 dBm, employing a mechanical spring constant of 40 N/m. In contrast to conventional MEMS phase shifters which employ thin metallic bridges which limit the current handling and show fatigue even at slightly elevated temperatures, this novel phase-shifter concept is only limited by the power handling of the transmission line itself, which is proven by temperature measurements at 40 dBm at 3 GHz and skin effect adapted extrapolation to 75 GHz by electro-thermal FEM analysis.\",\"PeriodicalId\":148226,\"journal\":{\"name\":\"2009 European Microwave Integrated Circuits Conference (EuMIC)\",\"volume\":\"35 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2009-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"7\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2009 European Microwave Integrated Circuits Conference (EuMIC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EUMC.2009.5296269\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 European Microwave Integrated Circuits Conference (EuMIC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EUMC.2009.5296269","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Phase error and nonlinearity investigation of millimeter-wave MEMS 7-stage dielectric-block phase shifters
This paper reports on phase error and nonlinearity investigation of a novel binary-coded 7-stage millimeter-wave MEMS reconfigurable dielectric-block phase shifter with best performance optimized for 75–110-GHz W-band. The binary-coded 7-stage phase shifter is constructed on top of a 3D micromachined coplanar waveguide transmission line by placing λ/2-long high-resistivity silicon dielectric blocks which can be displaced vertically by MEMS electrostatic actuators. The dielectric constant of each block is artificially tailor-made by etching a periodic pattern into the structure. Stages of 15°, 30° and 45° are optimized for 75 GHz and put into a coded configuration of a 7-stage phase shifter to create a binary-coded 15°+;30°+5×45° 7-stage phase shifter with a total phase shift of 270° in 19×15° steps. The binary-coded phase shifter shows a return loss better than −17 dB and an insertion loss less than −3.5 dB at the nominal frequency of 75 GHz, and a return loss of −12 dB and insertion loss of −4 dB at 110 GHz. The measurement results also show that the binary-coded phase shifter performs a very linear phase shift from 10–110 GHz. The absolute phase error at 75 GHz from its nominal value has an average of 2.61° at a standard deviation of 1.58° for all possible combinations, and the maximum error is 6° (for 240°). For frequencies from 10–110 GHz, all possible combinations have a relative phase error of less than 3% of the maximum phase shift at the specific frequencies. The 7-stage binary-coded phase shifter performs 71.1°/dB and 490.02°/cm at 75 GHz, and 98.3°/dB and 715.6°/cm at 110 GHz. From the measured self-modulation behavior the third-order intermodulation (IM) products level are derived to −82.35 dBc at a total input power of 40 dBm with the third-order IM intercept point (IIP3) of 49.15 dBm, employing a mechanical spring constant of 40 N/m. In contrast to conventional MEMS phase shifters which employ thin metallic bridges which limit the current handling and show fatigue even at slightly elevated temperatures, this novel phase-shifter concept is only limited by the power handling of the transmission line itself, which is proven by temperature measurements at 40 dBm at 3 GHz and skin effect adapted extrapolation to 75 GHz by electro-thermal FEM analysis.