T2: VLSI测试和老化优化的统计方法

A. Singh
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引用次数: 0

摘要

VLSI电路传统上在制造后单独测试;对所有ic应用相同的测试。然而,随着制造测试成本继续显示出与IC制造成本不成比例的增长,正在引入创新的新统计方法来优化测试。这些方法可分为两大类:一类是利用晶圆上工艺参数变化的统计信息,另一类是利用晶圆上缺陷分布的统计信息。本教程介绍了跨越这两个类别的测试方法,并通过LSI Logic, IBM, Intel和TI最近在生产电路上的一些研究的实验结果说明了它们的有效性
本文章由计算机程序翻译,如有差异,请以英文原文为准。
T2: Statistical Methods for VLSI Test and Burn-in Optimization
VLSI circuits have been traditionally tested individually following manufacture; the same tests being applied to all ICs. However, as manufacturing test costs continue to show a disproportionate increase in relation to IC fabrication costs, innovative new statistical methods are being introduced to optimize testing. Such methods fall into two broad categories: those that exploit statistical information in regard to the variation of process parameters on wafers, and those that exploit the statistics of defect distributions on wafers. This tutorial presents test methodologies that span both these categories and illustrate their effectiveness with experimental results from a number of recent studies on production circuits from LSI Logic, IBM, Intel and TI
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