太赫兹波无线通信中基于InP、GaN和insb的hemt和mmic的研究与开发

2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2016-10-01 DOI:10.1109/CSICS.2016.7751063

I. Watanabe, Y. Yamashita, A. Endoh, S. Hara, A. Kasamatsu, I. Hosako, H. Hamada, T. Kosugi, M. Yaita, A. Moutaouakil, H. Matsuzaki, O. Kagami, T. Takahashi, Y. Kawano, Y. Nakasha, N. Hara, D. Tsuji, K. Isono, S. Fujikawa, H. Fujishiro

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引用次数: 2

摘要

在日本总务省(MIC)发起的一项研发计划中，我们已经改进了基于inp的hemt和mmic的性能，用于使用300 GHz左右的高频载波的太赫兹波无线通信。此外，我们还在另一项研究中开发了GaN和insb基hemt。在本文中，我们展示了InP, GaN和insb - hemt，以及用于功率放大器和低噪声放大器的InP- mmic在300 GHz左右的性能。

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Research and Development of InP, GaN and InSb-Based HEMTs and MMICs for Terahertz-Wave Wireless Communications

We have improved the performances of InP-based HEMTs and MMICs for terahertz-wave wireless communications using a high frequency carrier wave around 300 GHz in an R&D program launched by the Ministry of Internal Affairs and Communications, Japan (MIC). Furthermore, we also have developed GaN and InSb-based HEMTs in another research. In this paper, we demonstrated the performances of InP, GaN and InSb-HEMTs, and InP-MMICs for power amplifier and low-noise amplifier operated around 300 GHz.

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2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)

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