J. Plouchart, F. Wang, A. Balteanu, B. Parker, M. Sanduleanu, M. Yeck, V. H. Chen, W. Woods, B. Sadhu, A. Valdes-Garcia, X. Li, D. Friedman
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引用次数: 21
摘要
采用32nm SOI CMOS技术实现的自修复毫米波SoC集成了带有12kB内存的8052微控制器、ADC、温度传感器和三级级联60GHz LNA,峰值增益为21dB, 53至62GHz范围内的平均NF为3.3dB,功耗为18mW。在集成uC上实现了一种间接NF感知算法,该算法使自适应偏置算法在P、V、T上分别将60GHz NF sigma和LNA功耗降低37%和40%。
A 18mW, 3.3dB NF, 60GHz LNA in 32nm SOI CMOS technology with autonomic NF calibration
A self-healing mmWave SoC integrating an 8052 microcontroller with 12kB of memory, an ADC, a temperature sensor, and a 3-stage cascode 60GHz LNA, implemented in a 32nm SOI CMOS technology exhibits a peak gain of 21dB, an average 3.3dB NF from 53 to 62GHz and 18mW power consumption. An indirect NF sensing algorithm was implemented on the integrated uC, which enables an adaptive biasing algorithm to reduce the 60GHz NF sigma and LNA power consumption by 37 and 40%, respectively, across P,V,T.