用于硅非均质VLSI技术的石墨烯晶圆可扩展生长和分层

S. Rahimi, S. R. Na, L. Tao, K. Liechti, D. Akinwande
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引用次数: 2

摘要

我们展示了最先进的可扩展石墨烯合成技术,器件产量和电学统计数据,具有最高性能的晶圆级器件,其电子特性类似于剥离的薄片。由于石墨烯表面无残留,石墨烯的机械分层产生了高质量的材料,并有望实现石墨烯与Si CMOS衬底的晶圆级BEOL键合集成。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Wafer scalable growth and delamination of graphene for silicon heterogeneous VLSI technology
We have demonstrated the state-of-the-art on scalable graphene synthesis, device yield and electrical statistics with the highest performance wafer-scale devices showing electronic properties similar to exfoliated flakes. The mechanical delamination of graphene resulted in high material quality due to residue free pristine graphene surface, and holds promise for wafer-scale BEOL bonding integration of graphene with Si CMOS substrates.
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