A. Shibib, Shuming Xu, Zhijian Xie, P. Gammel, M. Mastrapasqua, I. Kizilyalli
{"title":"用假栅场板控制LDMOS器件中的热载流子退化:实验演示","authors":"A. Shibib, Shuming Xu, Zhijian Xie, P. Gammel, M. Mastrapasqua, I. Kizilyalli","doi":"10.1109/WCT.2004.239939","DOIUrl":null,"url":null,"abstract":"It is experimentally demonstrated that hot carrier degradation in high voltage LDMOS devices can be minimized by adding a dummy gate field plate, DGFP, over the drain drift region close to the gate. The level of on resistance increase due to hot carrier stress can be controlled by design with the amount of the DGFP overlap of the drift region. Significant decrease in the degradation is experimentally observed by a 40% DGFP overlap without substantially affecting the breakdown voltage of the device. It was also demonstrated that the initial peak substrate/body current is a good indicator of the hot carrier degradation effect and can be used as a process monitor.","PeriodicalId":303825,"journal":{"name":"2004 Proceedings of the 16th International Symposium on Power Semiconductor Devices and ICs","volume":"61 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-05-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"11","resultStr":"{\"title\":\"Control of hot carrier degradation in LDMOS devices by a dummy gate field plate: experimental demonstration\",\"authors\":\"A. Shibib, Shuming Xu, Zhijian Xie, P. Gammel, M. Mastrapasqua, I. Kizilyalli\",\"doi\":\"10.1109/WCT.2004.239939\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"It is experimentally demonstrated that hot carrier degradation in high voltage LDMOS devices can be minimized by adding a dummy gate field plate, DGFP, over the drain drift region close to the gate. The level of on resistance increase due to hot carrier stress can be controlled by design with the amount of the DGFP overlap of the drift region. Significant decrease in the degradation is experimentally observed by a 40% DGFP overlap without substantially affecting the breakdown voltage of the device. It was also demonstrated that the initial peak substrate/body current is a good indicator of the hot carrier degradation effect and can be used as a process monitor.\",\"PeriodicalId\":303825,\"journal\":{\"name\":\"2004 Proceedings of the 16th International Symposium on Power Semiconductor Devices and ICs\",\"volume\":\"61 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2004-05-24\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"11\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2004 Proceedings of the 16th International Symposium on Power Semiconductor Devices and ICs\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/WCT.2004.239939\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2004 Proceedings of the 16th International Symposium on Power Semiconductor Devices and ICs","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/WCT.2004.239939","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Control of hot carrier degradation in LDMOS devices by a dummy gate field plate: experimental demonstration
It is experimentally demonstrated that hot carrier degradation in high voltage LDMOS devices can be minimized by adding a dummy gate field plate, DGFP, over the drain drift region close to the gate. The level of on resistance increase due to hot carrier stress can be controlled by design with the amount of the DGFP overlap of the drift region. Significant decrease in the degradation is experimentally observed by a 40% DGFP overlap without substantially affecting the breakdown voltage of the device. It was also demonstrated that the initial peak substrate/body current is a good indicator of the hot carrier degradation effect and can be used as a process monitor.