不同成分Ge-SiO2纤维缺陷中心形成及光敏性动力学

T. Tsai, E. Friebele
{"title":"不同成分Ge-SiO2纤维缺陷中心形成及光敏性动力学","authors":"T. Tsai, E. Friebele","doi":"10.1364/bgppf.1997.jma.4","DOIUrl":null,"url":null,"abstract":"It was reported that the Ge E' center is related to second harmonic generation (SHG) in Ge-SiO21. Since the Ge E' center is known as hole-trapping center, this suggests that the positive charge trapping sites for SHG in Ge-SiO2 are Ge E' centers. However, in a later, detailed thermal stability study, we reported2 that only a variant of the Ge E' center, i.e., Ge E’d1, has thermal stability similar to SHG. This suggests that not all of the observed Ge E' centers are charged.","PeriodicalId":182420,"journal":{"name":"Bragg Gratings, Photosensitivity, and Poling in Glass Fibers and Waveguides: Applications and Fundamentals","volume":"9 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Kinetics of defect centers formation and photosensitivity in Ge-SiO2 fibers of various compositions\",\"authors\":\"T. Tsai, E. Friebele\",\"doi\":\"10.1364/bgppf.1997.jma.4\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"It was reported that the Ge E' center is related to second harmonic generation (SHG) in Ge-SiO21. Since the Ge E' center is known as hole-trapping center, this suggests that the positive charge trapping sites for SHG in Ge-SiO2 are Ge E' centers. However, in a later, detailed thermal stability study, we reported2 that only a variant of the Ge E' center, i.e., Ge E’d1, has thermal stability similar to SHG. This suggests that not all of the observed Ge E' centers are charged.\",\"PeriodicalId\":182420,\"journal\":{\"name\":\"Bragg Gratings, Photosensitivity, and Poling in Glass Fibers and Waveguides: Applications and Fundamentals\",\"volume\":\"9 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Bragg Gratings, Photosensitivity, and Poling in Glass Fibers and Waveguides: Applications and Fundamentals\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1364/bgppf.1997.jma.4\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Bragg Gratings, Photosensitivity, and Poling in Glass Fibers and Waveguides: Applications and Fundamentals","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1364/bgppf.1997.jma.4","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2

摘要

据报道,Ge E′中心与Ge- sio21中的二次谐波(SHG)有关。由于Ge E′中心被称为空穴捕获中心,这表明Ge- sio2中SHG的正电荷捕获位点是Ge E′中心。然而,在后来的一项详细的热稳定性研究中,我们报告说,只有Ge E'中心的一个变体,即Ge E' 1,具有类似于SHG的热稳定性。这表明并非所有观测到的Ge E'中心都带电。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Kinetics of defect centers formation and photosensitivity in Ge-SiO2 fibers of various compositions
It was reported that the Ge E' center is related to second harmonic generation (SHG) in Ge-SiO21. Since the Ge E' center is known as hole-trapping center, this suggests that the positive charge trapping sites for SHG in Ge-SiO2 are Ge E' centers. However, in a later, detailed thermal stability study, we reported2 that only a variant of the Ge E' center, i.e., Ge E’d1, has thermal stability similar to SHG. This suggests that not all of the observed Ge E' centers are charged.
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