金刚石热沉层抑制AlGaN/GaN高电子迁移率晶体管的自热效应

2016 International Conference on Advanced Technologies for Communications (ATC) Pub Date : 2016-10-01 DOI:10.1109/ATC.2016.7764785

V. Volchek, Dao Dinh Ha, V. Stempitsky, Tran Tuan Trung

{"title":"金刚石热沉层抑制AlGaN/GaN高电子迁移率晶体管的自热效应","authors":"V. Volchek, Dao Dinh Ha, V. Stempitsky, Tran Tuan Trung","doi":"10.1109/ATC.2016.7764785","DOIUrl":null,"url":null,"abstract":"The influence of diamond heat sink layers on the electrical characteristics of AlGaN/GaN high electron mobility transistors (HEMTs) has been investigated using numerical simulation in Wachutka's thermodynamically rigorous model of lattice heating. It is shown that the diamond layers can significantly decrease device temperature, thus improving its current-voltage characteristics. Parameters of the diamond heat sink were optimized for the HEMTs on sapphire and silicon substrates.","PeriodicalId":225413,"journal":{"name":"2016 International Conference on Advanced Technologies for Communications (ATC)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Suppression of the self-heating effect in AlGaN/GaN high electron mobility transistor by diamond heat sink layers\",\"authors\":\"V. Volchek, Dao Dinh Ha, V. Stempitsky, Tran Tuan Trung\",\"doi\":\"10.1109/ATC.2016.7764785\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The influence of diamond heat sink layers on the electrical characteristics of AlGaN/GaN high electron mobility transistors (HEMTs) has been investigated using numerical simulation in Wachutka's thermodynamically rigorous model of lattice heating. It is shown that the diamond layers can significantly decrease device temperature, thus improving its current-voltage characteristics. Parameters of the diamond heat sink were optimized for the HEMTs on sapphire and silicon substrates.\",\"PeriodicalId\":225413,\"journal\":{\"name\":\"2016 International Conference on Advanced Technologies for Communications (ATC)\",\"volume\":\"9 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 International Conference on Advanced Technologies for Communications (ATC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ATC.2016.7764785\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 International Conference on Advanced Technologies for Communications (ATC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ATC.2016.7764785","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 1

摘要

采用Wachutka晶格加热热力学严格模型，研究了金刚石热沉降层对AlGaN/GaN高电子迁移率晶体管(HEMTs)电学特性的影响。结果表明，金刚石层可以显著降低器件温度，从而改善其电流-电压特性。对蓝宝石和硅衬底hemt的金刚石散热器参数进行了优化。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Suppression of the self-heating effect in AlGaN/GaN high electron mobility transistor by diamond heat sink layers

The influence of diamond heat sink layers on the electrical characteristics of AlGaN/GaN high electron mobility transistors (HEMTs) has been investigated using numerical simulation in Wachutka's thermodynamically rigorous model of lattice heating. It is shown that the diamond layers can significantly decrease device temperature, thus improving its current-voltage characteristics. Parameters of the diamond heat sink were optimized for the HEMTs on sapphire and silicon substrates.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2016 International Conference on Advanced Technologies for Communications (ATC)

自引率

0.00%

发文量