溅射压电薄膜最佳沉积的统计建模

F. J. Hickernell, R. Yue, F. Hickernell
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引用次数: 2

摘要

用于集成体声波(BAW)和表面声波(SAW)器件与半导体电路的溅射沉积压电薄膜的质量取决于几个沉积参数,包括衬底温度、背景压力、气体成分、气体流速和沉积速率。希望建立基于可控制参数值的选择的制造工艺,以优化薄膜质量。通常的做法是通过改变可控参数来进行许多沉积实验,以确定最佳的薄膜生长条件。在这个空间内,薄膜在许多不同的条件下生长,并测量与薄膜性能相关的响应参数。然后对数据进行多元线性回归模型拟合。通过对拟合响应进行优化,得到最佳生长条件。这一方法用最近开发的高质量磁控溅射氮化铝(AlN)薄膜的数据来说明,这些薄膜的声学特性与在相当高的衬底温度下生长的外延薄膜相似。由于所涉及的资源成本可能很高,这取决于所进行的沉积运行的数量,因此希望尽量减少实验的数量,并最大限度地从中获得信息。讨论了如何利用实验设计的统计理论来达到这一目标。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Statistical modeling for the optimal deposition of sputtered piezoelectric films
The quality of sputtered-deposited piezoelectric films used for integrating bulk acoustic wave (BAW) and surface acoustic wave (SAW) devices with semiconductor circuitry depends on several deposition parameters including substrate temperature, background pressure, gas composition, gas flow rate, and deposition rate. It is desirable to establish the fabrication process based on a a selection of the controllable parameter values that optimizes the film quality. It is common practice to perform a number of deposition experiments by varying the controllable parameters to determine the optimal film growth conditions. The films are grown under a number of different conditions within this space and a response parameter related to film performance is measured. Then a multiple linear regression model is fit to the data. By optimizing the fitted response the best growth conditions can be obtained. This approach is illustrated with data from recent work on the development of very high quality magnetron sputtered aluminum nitride (AlN) films whose acoustic characteristics are like those of epitaxial films grown at considerably higher substrate temperatures. Because the resource cost involved can be high depending upon the number of deposition runs made, it is desirable to minimize the number of experiments and maximize the amount of information gained from them. A discussion is given on how the statistical theory of experimental design can be used to obtain this goal.
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