百万比特BiCMOS ram的动态重构方案

Records of the 1993 IEEE International Workshop on Memory Testing Pub Date : 1993-08-09 DOI:10.1109/MT.1993.263137

V.N. Rayapati, B. Kaminska

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摘要

本文讨论了两种用于百万比特BiCMOS ram的动态重构方案。这些方案允许在芯片级进行故障检测，并自动重新配置到芯片内的无故障存储单元。与传统方法相比，BiCMOS SRAM的存取时间提高了约35%，芯片面积提高了25%，芯片良率提高了10%。

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Dynamic reconfiguration schemes for mega bit BiCMOS SRAMs

In this paper two dynamic reconfiguration schemes are discussed for mega bit BiCMOS SRAMs. These schemes allow the failure detection at the chip level and automatic reconfiguration to fault free memory cells within the chip. BiCMOS SRAM access time improvement of about 35%, chip area of 25%, and chip yield of 10% are achieved respectively, as compared to the conventional methods.<>

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Records of the 1993 IEEE International Workshop on Memory Testing

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