硅微晶片组装的激光诱导正向转移

H. K. Kannojia, G. Van Steenberge
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引用次数: 0

摘要

半导体行业不能再指望单片集成来实现上一个时代的经济效益。现在,新的封装解决方案正在被采用,以实现以前与硅缩放满足的商业优势。在这个新时代,异构集成,特别是微芯片的作用至关重要。目前正在研究几种技术,以实现大规模但仍然精确的小型半导体芯片组装,包括接触转移印刷、流体组装和激光诱导正向转移(LIFT)印刷。除了非常高的传递速率,基于激光的传质提供了真正选择性的优势,并且在尺寸和材料方面非常灵活。本研究提出了一种微晶片制备和组装的组合方法,系统地研究了200×200µm2 Si微晶片的传输精度作为各种实验条件的函数,这将有助于系统级封装应用中不同微晶片的异构集成。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Laser-Induced Forward Transfer for Assembly of Silicon Micro-Chiplets
The semiconductor industry can no longer count on monolithic integration to accomplish the economic benefits of the previous era. Now, new packaging solutions are being adopted to achieve the commercial advantages that were previously met with silicon scaling. The role of heterogeneous integration, especially micro-chiplets, is pivotal in this new era. Several techniques are being investigated to allow for massive but still precise assembly of small semiconductor chiplets, including contact transfer printing, fluidic assembly, and laser-induced forward-transfer (LIFT) printing. In addition to very high transfer rates, laser-based mass transfer offers the advantages of being truly selective, and extremely flexible in terms of dimensions and materials. This study presents a combined approach for micro-chiplet preparation and assembly, with a systematic investigation into the transfer accuracy of 200×200 µm2 Si micro-chiplets as a function of various experimental conditions which would be useful for heterogeneous integration of different micro-chiplets in systems-in-package applications.
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