慢波耦合振荡器的三维晶圆级集成设计

Yujie Hua, Cheng-rui Zhang, Liang Zhou, J. Mao
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引用次数: 1

摘要

介绍了慢波耦合振荡器三维晶圆级集成的设计方法。对传输线谐振器的Q因数进行了计算、比较和改进。为了减小振荡器的尺寸,我们使用多层BCB集成了GaAs场效应管低噪声放大器和慢波谐振器。最后对封装振荡器的相位噪声进行了计算。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Design of 3-dimensional wafer level integrations of slow-wave coupled oscillators
This paper demonstrated the design methodology of 3 dimensional wafer level integrations of slow wave coupled oscillators. The Q factors have been calculated, compared and improved with the transmission line resonators. In order to minimize the size of the oscillator, we used multilayer BCB to integrate the GaAs FET low noise amplifier and slow wave resonators. Finally the phase noise of the packaged oscillator has been calculated.
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