采用0.35/spl mu/m FeRAM技术的无源UHF RFID标签LSI，具有36.6%效率的cmos整流器和电流模式解调器

2006 IEEE International Solid State Circuits Conference - Digest of Technical Papers Pub Date : 2006-09-18 DOI:10.1109/ISSCC.2006.1696166

H. Nakamoto, D. Yamazaki, T. Yamamoto, H. Kurata, S. Yamada, K. Mukaida, T. Ninomiya, T. Ohkawa, S. Masui, K. Gotoh

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引用次数: 87

摘要

无源UHF RFID标签LSI采用0.35 mm CMOS，具有2kb FeRAM，与基于eeprom的标签相比，可实现2.9倍的32b读写吞吐量。CMOS全波整流器通过无损的内部v值抵消和镜像堆栈结构，将功率效率从16.6%提高到36.6%。电流模式ASK解调器在输入功率的27dB动态范围内将15%的功率调制转换成线性电流信号

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A Passive UHF RFID Tag LSI with 36.6% Efficiency CMOS-Only Rectifier and Current-Mode Demodulator in 0.35/spl mu/m FeRAM Technology

A passive UHF RFID tag LSI in 0.35mum CMOS with 2kb FeRAM enables the 2.9-times higher 32b read-and-write throughput over an EEPROM-based tag. A CMOS full-wave rectifier improves the power efficiency from 16.6% up to 36.6% by lossless internal Vth cancellation and mirror stack architecture. A current-mode ASK demodulator converts the 15% power modulation into linear current signal over a 27dB dynamic range of the incoming power

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2006 IEEE International Solid State Circuits Conference - Digest of Technical Papers

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