超薄三维集成新技术:工艺与热研究

S. Pinel, J. Tasselli, A. Marty, J. Bailbé, E. Beyne, R. Van Hoof, S. Marco, S. Leseduarte, O. Vendier, A. Coello-Vera
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引用次数: 5

摘要

基于UTCS的概念,提出了一种新的垂直芯片集成方案。它包括在硅衬底上堆叠薄芯片。横向和垂直金属互连以及薄芯片嵌入BCB层中。提出了一种晶圆级集成技术。讨论了这种叠层结构的热性能。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
New ultrathin 3D integration technique: technological and thermal investigations
A new vertical chip integration is proposed, based on the UTCS concept. It consists in stacking thinned chips on top of a silicon substrate. Lateral and vertical metal interconnections and the thinned chips are embedded in BCB layers. This wafer scale integration technique is presented. Thermal behavior of such stacked structure is also discussed.
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