{"title":"采用连续离子层吸附反应和水热法制备ZnO纳米结构的algainp基发光二极管","authors":"N. Lin, S. Shei, S. Chang","doi":"10.1109/ISNE.2015.7131953","DOIUrl":null,"url":null,"abstract":"The authors applied a simple and low-cost successive ionic layer adsorption and reaction (SILAR) and hydrothermal method (Hm) methods to form ZnO nanostructures for AlGaInP-based light-emitting diodes (LEDs). With 20 mA current injection, it was found that forward voltages were all 2.0 V when the 20mA output powers were 0.41, 0.53, 0.56, 0.60, and 0.50 mW for LED I, LED II, LED III, LED IV, and LED V, respectively. Furthermore, it was also found that the formation of the ZnO nanostructure on the top of GaP surface did not degrade the electrical properties.","PeriodicalId":152001,"journal":{"name":"2015 International Symposium on Next-Generation Electronics (ISNE)","volume":"24 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"AlGaInP-based LEDs with ZnO nanostructures by successive ionic layer adsorption and reaction and hydrothermal methods\",\"authors\":\"N. Lin, S. Shei, S. Chang\",\"doi\":\"10.1109/ISNE.2015.7131953\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The authors applied a simple and low-cost successive ionic layer adsorption and reaction (SILAR) and hydrothermal method (Hm) methods to form ZnO nanostructures for AlGaInP-based light-emitting diodes (LEDs). With 20 mA current injection, it was found that forward voltages were all 2.0 V when the 20mA output powers were 0.41, 0.53, 0.56, 0.60, and 0.50 mW for LED I, LED II, LED III, LED IV, and LED V, respectively. Furthermore, it was also found that the formation of the ZnO nanostructure on the top of GaP surface did not degrade the electrical properties.\",\"PeriodicalId\":152001,\"journal\":{\"name\":\"2015 International Symposium on Next-Generation Electronics (ISNE)\",\"volume\":\"24 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2015-05-04\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2015 International Symposium on Next-Generation Electronics (ISNE)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISNE.2015.7131953\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 International Symposium on Next-Generation Electronics (ISNE)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISNE.2015.7131953","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
AlGaInP-based LEDs with ZnO nanostructures by successive ionic layer adsorption and reaction and hydrothermal methods
The authors applied a simple and low-cost successive ionic layer adsorption and reaction (SILAR) and hydrothermal method (Hm) methods to form ZnO nanostructures for AlGaInP-based light-emitting diodes (LEDs). With 20 mA current injection, it was found that forward voltages were all 2.0 V when the 20mA output powers were 0.41, 0.53, 0.56, 0.60, and 0.50 mW for LED I, LED II, LED III, LED IV, and LED V, respectively. Furthermore, it was also found that the formation of the ZnO nanostructure on the top of GaP surface did not degrade the electrical properties.
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